인피니언 6월23일부터
Physical AI HBM Smart Factory SDV AIoT Power Semicon 특수 가스 정정·반론보도 모음 e4ds plus

ROHM Develops 650V Withstand Voltage IGBT… Supports High-Efficiency Design for EV and Industrial Inverters

Google 우선 소스 기사입력2026.06.19 13:39

Achieves 1.55V conduction loss with 4th generation IGBTs, AEC-Q101 compliant

ROHM aims to simultaneously achieve loss reduction and reliability improvement through its new 650V withstand voltage IGBT power semiconductor product for electric vehicles and industrial equipment, and to expand application fields such as electric compressors and inverters.


ROHM announced on the 18th that it has developed a fourth-generation 650V withstand voltage IGBT applicable to automotive electric compressors, HV heaters, and inverters for industrial equipment.

This product is characterized by achieving a conduction loss (VCE(sat)) of 1.55V. The company explained that it increased current density and simultaneously reduced switching and conduction losses through improvements in the device structure and process.

In addition, short-circuit withstand capability was secured to achieve a resistance level of 7 microseconds at 25°C. Short-circuit withstand capability refers to the time a semiconductor can withstand an overcurrent without being damaged.

IGBTs (Insulated Gate Bipolar Transistors) are power semiconductors that combine high-speed switching and low-loss characteristics, and are used in electric vehicles and industrial power control devices.

The products consist of 12 types of TO-247N packages and 10 types of bare chips. A TO-247-4L package product family is also under additional development.

ROHM announced that it has been mass-producing the product at a scale of 1 million units per month since May 2026. Some products are supplied through online parts distribution channels.

This product is designed to meet AEC-Q101, the reliability standard for automotive electronic components.

650V-class IGBTs are widely used in electric vehicle auxiliary devices and industrial motor control devices. While SiC semiconductors are being expanded in main drive systems due to the high voltage of electric vehicles, demand for IGBTs is being maintained in devices with relatively small power capacities.

The company stated that this product is designed to meet the demands for improved energy efficiency and device miniaturization.

ROHM plans to expand its product lineup in the future through the development of small package products and surface-mount IGBTs.