DCT Materials, utilizing the Nano Convergence Technology Institute fab facility
Development of spin-coating hard mask material for memory semiconductors
Ministry of Science and ICT to Open 12-inch Semiconductor Testbed in 21 Years


DCT Materials has succeeded in securing core material technology for memory semiconductors through joint research with the Nano Comprehensive Technology Institute, a public semiconductor test bed.

The Ministry of Science and ICT announced on the 12th that DCT Materials and the Nano Convergence Technology Institute have succeeded in achieving technological independence for 'spin coating hard mask materials for high aspect ratio memory semiconductors', which are currently dependent on imports.

A hard mask is an auxiliary material for a photomask that engraves semiconductor microcircuits, and is a process material that enables effective pattern formation through an etching process.

Recently, for highly integrated semiconductor manufacturing, a process for manufacturing semiconductors with a high aspect ratio has become essential. However, the larger the aspect ratio, the more likely the pattern is to collapse during the etching process.

The newly developed material has better flattening characteristics and is price competitive than existing products, making it possible to replace hard mask materials for memory semiconductors that have previously been dependent on foreign countries such as Japan with domestic products.

The first-generation hard mask process has reached its miniaturization limit, and the development of the second-generation process has been actively conducted worldwide, but the semiconductor material production equipment used by domestic small and medium-sized material companies has become outdated compared to the equipment owned by semiconductor final production companies, making it difficult to meet the verification requirements for mass-produced products.

DCT Materials has successfully developed a product that meets the heat resistance, flatness, and other requirements for delivery to large companies in end-use by jointly promoting technology development using the fab facilities of the Nano Convergence Technology Institute.

The Ministry of Science and ICT’s Ko Seo-gon, director of basic research policy, said, “We plan to utilize nano infrastructure organizations such as the Nano Comprehensive Technology Institute to support technological independence in core semiconductor materials, parts, and equipment,” and “If the 12-inch semiconductor test bed, which is currently under construction with the goal of service in the first half of 2021, is completed, it is expected to contribute to enhancing the competitiveness of the domestic semiconductor materials, parts, and equipment industry.”