Radar transceiver switch, previously used circulator
GaN SPDT switch integrated circuit developed by the research team,
Reduced to 1/450th of the volume and 90% of the weight Domestic researchers have developed technology to domestically produce key components of radar transmitters and receivers. This will enable the defense and civilian sectors to become self-sufficient in radar technology and actively respond to export regulations on small and medium-sized businesses without relying on foreign technology.
The DMC Convergence Research Group, led by ETRI, announced on the 24th that it has developed, for the first time in Korea, a gallium nitride (GaN) switch integrated circuit technology for radar semiconductor transmitters and receivers that can be used in a specific frequency band.
▲ Radar semiconductor developed by ETRI research team
GaN switch integrated circuit for transceiver [Photo = ETRI]
In order to detect and reconnoiter long distances, radars need high output and radio control technology that minimizes signal loss during information transmission. The research team developed radar technology that can be used in the front section of fighter jets’ active electronically scanned arrays (AESA).
The radar's transmitter and receiver are manufactured in a module form by assembling individual chips such as a transmitter/receiver switch, power amplifier, and low-noise amplifier. Among these, the transmitter/receiver switch is a device that separates the incoming and outgoing transmission signals from the antenna.
However, the circulators that previously performed this role were bulky and required thousands of transmitter/receiver modules, making it difficult to manufacture radars. Accordingly, research is actively being conducted on single-pole, double-throw (SPDT) switch integrated circuits that implement circulator functions in semiconductor chips.
The DMC Convergence Research Group has developed switch integrated circuits for C-band and X-band radar transceivers. By utilizing GaN, which is advantageous in withstanding high output, the outputs are 40W and 30W, respectively, and the isolation performance is 30dB or higher. It is on par with commercial products from the US and Europe.
The GaN switch developed by the research team is 1.3×1.55×0.1mm in size, or 0.2mm³. The circulator size of the commercial product based on this is 98mm³, which is 450 times smaller. The module weight can also be reduced by up to 10%.
▲ Radar semiconductor transmitter/receiver developed by ETRI research team
Inspecting the GaN switch manufacturing process [Photo = ETRI]
This technology is expected to be of great help in reducing the size of AESA radar transceiver modules. In particular, it is expected to be widely utilized as it can be applied to various fields such as military high-power radar transceivers, civilian ships, and weather radar transceiver modules.
Meanwhile, as part of research to advance radar technology, there are increasing attempts to manufacture individual integrated circuits, such as switches, power amplifiers, and low-noise amplifiers, as a single integrated circuit on the same semiconductor substrate.
The research team plans to conduct follow-up research on applying this technology to integrate individual integrated circuits for transmission and reception onto a single chip, and plans to support commercialization through technology transfer to defense industry companies.
