Infineon Technologies (Korea CEO Seung-Soo Lee) is strengthening its leadership in the power semiconductor market by improving its production capacity for wide bandgap (SiC and GaN) semiconductors.

Infineon announced on the 21st that it will invest more than 2 billion euros to build a third module at its Kulim plant in Malaysia.

Once completed, the new modules are expected to generate additional revenue of €2 billion per year from SiC and GaN-based products.

Infineon already supplies SiC products to more than 3,000 customers. SiC semiconductors offer better system performance in terms of efficiency, size and cost compared to silicon-based solutions and are suitable for applications such as industrial power supplies, solar, transportation, drives, automotive and EV charging.

Infineon aims to achieve $1 billion in sales of SiC-based power semiconductors by the mid-2020s. The GaN market is also expected to grow significantly from $47 million in 2020 to $810 million in 2025. Infineon has an understanding of advanced systems and applications, a broad GaN IP portfolio, and a large R&D workforce.

The fab is expected to break ground in June, be fully operational by summer 2024, and begin supplying wafers in the second half of 2024.