The technology competition required to build 6G communication infrastructure beyond 5G is progressing. Early-generation RF power amplifiers have been led by LDMOS, but RF GaN-on-Si technology, which provides superior RF characteristics and output, is showing results in prototypes and accelerating research and development aimed at mass production.

Recently, global semiconductor company STMicroelectronics (hereinafter referred to as ST) announced that it has successfully produced an RF GaN-on-Si prototype together with MACOM Technology Solutions Holdings (hereinafter referred to as MACOM), a semiconductor supplier for the communications, industrial, defense, and data center industries.

RF GaN-on-Si has significant potential for 5G and 6G infrastructure growth. Laterally-diffused metal-oxide semiconductor (LDMOS), the oldest RF power technology, has driven early-generation RF power amplifier (PA) products. GaN offers superior RF characteristics and much higher output power than LDMOS for these RF PAs, and can be manufactured on silicon or silicon carbide (SiC) wafers.

RF GaN-on-SiC may face increased cost pressures due to increased competition for SiC wafers in high-power applications and non-mainstream semiconductor processes. In contrast, the GaN-on-Si technology being developed by ST and Maycom is expected to deliver both more efficient economies of scale and competitive performance as it can be integrated into standard semiconductor process flows.

The prototype wafers and devices manufactured by ST have achieved cost and performance targets that enable them to compete effectively with existing LDMOS and GaN-on-SiC technologies in the current market, ST said. The prototypes are expected to be another important milestone as they move into the validation and industrialization phase.

ST plans to achieve the verification and industrialization milestones within the year. With this progress, ST and Maycom have begun discussions to further expand their efforts to accelerate the introduction of advanced RF GaN-on-Si products.

“This technology has now reached the performance levels and process maturity to effectively challenge established LDMOS and GaN-on-SiC,” said Edoardo Mulli, STMicroelectronics Senior Vice President. “It will provide cost-effectiveness and supply chain advantages for high-volume applications such as wireless infrastructure.”

“We will continue to work with ST to commercialize and mass-produce GaN-on-Si technology,” said Stephen G. Daly, Chairman of Maycom. “Our collaboration with ST is a key part of Maycom’s RF power strategy, and we are confident that GaN-on-Si will enable us to expand our market share in applications where our technology requirements are met.”