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▲Lee Sang-min, Director of Wayvis Research Institute
Lee Sang-min, Director of Wayvis Labs, “We have GaN solutions from packaging to finished products”
We have 0.3-4㎛ device solutions, and will provide 0.1-2㎛ service next year for use in RF and amplifiers, etc.
Gallium nitride (GaN) semiconductors, which are considered to be next-generation semiconductor devices, are at the core of low-power solutions and are expected to gradually expand their related markets due to their high power efficiency and ability to operate at higher frequencies, voltages, and temperatures with lower power loss.
There is a company that produces GaN RF components using this GaN semiconductor technology and uses them for 5G/6G mobile communications, satellite communications, and military radar. Wayvis, a domestic semiconductor company, is the first in Korea to own a GaN RF semiconductor fab and is providing related product design and production solution services.
We met with Lee Sang-min, head of the Wavevis Foundry Business Division, at the Korea Electromagnetic Engineering Society's academic conference and industry exhibition.
■ Please introduce Wayvis Founded in 2017, Waybis is the only company in Korea with a foundry that manufactures GaN electronic devices.
■ What does the micrometer unit mean? The Wavis Foundry process is indicated as 0.1 to 0.4 ㎛ (micrometer), which refers to the gate length of the gallium nitride material. Therefore, the shorter the gate length, the higher the frequency.
■ What solutions do you have? Wayvis has been in mass production of 0.4㎛ since 2018, and 0.3㎛ devices since 2019. The 0.2㎛ process is currently under development. We are still preparing for reliability tests, and we are currently developing a unit process for 0.1㎛ devices and plan to begin full-scale development next year.
The 0.4㎛ devices can be applied in the 4G (LTE) signal band called S-Band and the 5G low frequency range, and these devices are currently being applied to radar, a military weapon system.
The 0.3㎛ device can cover the 4 to 8GHz frequency belonging to the C-Band, and the 0.2㎛ device can cover the 8 to 18GHz frequency belonging to the X-Band and Ku-band (K under Band).
The 0.1㎛ device is a high-frequency RF device that can cover the Ka-Band of 24 to 36 GHz.
▲Wayvis 4-inch GaN wafer sample
It consists of two business divisions: a foundry division that produces GaN devices on 4-inch wafers and a packaging division that makes TR and RF modules using the manufactured devices. Customers who want foundries can receive services from the foundry division, and if they want everything from packaging to finished products, they can have small package transistors made and received.
GaN devices are housed inside a ceramic package, and when these devices are configured in a module form with a circuit, even a very large power amplifier such as a SSPA (Solid State Power Amplifier) can be serviced.
Wayvis has been around for about 5 years, but it is the only company in Korea that can manufacture GaN devices through a foundry, and it currently provides services such as producing RF finished products and amplifiers using these devices.
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