▲ Infineon HYPERRAM 3.0 (Image provided by Infineon)


Suitable for AIoT·V2X emd applications requiring large RAM memory
Same data rate as SDR DRAM, fewer pins and less power consumption

Infineon Technologies (hereinafter referred to as Infineon) has introduced its third-generation HYPERRAM memory solution capable of a data rate of 800 MBps by adopting an extended HyperBus interface.

Infineon announced on the 17th that it is launching HYPERRAM™ 3.0, a low pin count, low power, high bandwidth memory solution.

HYPERRAM 3.0 adopts a new 16-bit extended version HyperBus™ interface, delivering 800MBps of throughput, double that of the previous generation.

HYPERRAM 3.0 is suitable for applications that require expanded RAM memory, such as video buffering, factory automation, AIoT, and automotive V2X, as well as applications that require scratch pad memory for advanced mathematical calculations.

Infineon's HYPERRAM is a standalone PSRAM-based volatile memory that allows for easy and economical addition of expansion memory.

Additionally, the data rate is the same as that of SDR DRAM, but the number of pins and power consumption are much lower.

Data per pin of HyperBus interfaceIncreasing data throughput allows for the use of microcontrollers (MCUs) with fewer pins and printed circuit boards (PCBs) with fewer layers, reducing application complexity and creating cost-effective designs.

“The new HYPERRAM 3.0 memory solution achieves significantly higher throughput per pin than existing technologies like PSRAM or SDR DRAM,” said Ramesh Chettuvetty, Director Applications and Marketing, Automotive Business Unit, Infineon. “Its low-power characteristics also enable improved power consumption without sacrificing throughput, making it ideal for industrial and IoT solutions.”