STMicroelectronics (ST), a global semiconductor leader supporting diverse electronics applications and customers, is strengthening its supply capacity for silicon carbide (SiC) substrates by establishing an integrated SiC substrate manufacturing facility.

ST announced on the 7th that it will build an integrated SiC substrate manufacturing facility in Italy.

Together with the existing SiC device manufacturing facility in Catania, Italy, this SiC substrate manufacturing facility is the first in Europe to integrate all stages of the production flow to mass produce 150mm SiC epitaxial substrates.

Production is targeted for 2023, and once production begins, it is expected that the supply of SiC substrates between the internal and distribution markets will be balanced.

The facility will support growing demand for SiC devices across automotive and industrial applications.

This project is a key step in advancing ST’s vertical integration strategy for its SiC business.

The project will be supported by the Italian government under the National Recovery and Resilience Plan with a budget of €730 million (KRW 1.165 trillion) over five years, and upon completion, will directly create approximately 700 additional jobs.

Jean Marc, President and CEO of ST Jean-Marc Chery said, “ST is transforming its global manufacturing operations with additional 300mm manufacturing capacity and focused investments in wide bandgap semiconductors to achieve its $20 billion+ revenue target.

ST is expanding its operations in Catania, a power semiconductor technology hub where we have integrated our SiC research, development and manufacturing capabilities in close collaboration with Italian research institutes, universities and suppliers,” said Mr. Henriques. “The new facility will be a key part of our SiC vertical integration strategy, further increasing supply volumes and strengthening our supply of SiC substrates to support automotive and industrial customers in the transition to electrification and high efficiency.”

ST's leadership in SiC is the result of 25 years of focused R&D efforts backed by a vast portfolio of core patents.

Catania, home to ST’s largest SiC R&D and manufacturing facility, has long played a key role in ST’s innovation, successfully contributing to the development of new solutions to produce improved SiC devices in higher volumes.

This investment will further strengthen Catania’s role as a global competence center for silicon carbide technologies, with additional growth opportunities, along with a power electronics ecosystem built on a large supplier network, as well as long-term and successful collaborations between ST and various stakeholders (universities, the Italian National Research Council CNR, companies involved in equipment and product manufacturing).

ST's advanced, high-volume STPOWER SiC products are currently manufactured at its Catania and Ang Mo Kio fabs in Singapore.

Assembly and testing are done at backend facilities located in Shenzhen, China and Bouskoura, Morocco.<br />
The investment in SiC substrate fabrication facilities builds on this expertise and is a key milestone in ST’s journey to reach 40% internal substrate sourcing by 2024.