Samsung Electronics is entering mass production of the world's highest-capacity 8th-generation V-NAND, which significantly improves bit density per wafer, and is expanding its V-NAND business to include the automotive market, which demands high reliability, along with leading the high-capacity market for next-generation servers.

Samsung Electronics announced on the 7th that it has begun mass production of the world's highest capacity '1Tb (terabit) 8th generation V-NAND'.

Samsung Electronics' 1Tb TLC (Triple Level Cell) 8th generation V-NAND is a high-capacity product with the industry's highest bit density, and the bit density per wafer has been significantly improved compared to the previous generation.

The 8th generation V-NAND supports data input/output speeds of up to 2.4 Gbps by applying the latest NAND flash interface 'Toggle DDR 5.0'. It is about 1.2 times improved compared to the 7th generation V-NAND.

Additionally, the 8th generation V-NAND supports the PCIe 4.0 interface and plans to support PCIe 5.0 in the future.

Samsung Electronics plans to lead the next-generation enterprise server market with high capacity using its 8th generation V-NAND, while also expanding its business to the automotive market, which demands high reliability.

Samsung Electronics Memory Business Division Flash Development Office Vice President Heo Sung-hoe said, “As the number of V-NAND layers increases due to the market’s demand for high density and high capacity, we have secured the basic technology to reduce both the planar area and height of cells with 3D scaling technology and control the interference phenomenon that occurs when reducing the cell volume.” He added, “With the 8th generation V-NAND, we will satisfy market demand and provide more differentiated products and solutions.”

Samsung Electronics previously announced plans to mass-produce the world's highest-capacity 8th-generation V-NAND and various next-generation memory solutions at the 'Flash Memory Summit' in August and 'Samsung Tech Day' in October.