A new patterning system that is faster, simpler, and more cost-effective than existing EUV double patterning systems is emerging as an innovative alternative that can reduce the exposure process in advanced semiconductor manufacturing.

Applied Materials unveiled its 'Centura Sculpta' patterning system on the 2nd.

This technology will enable semiconductor manufacturers to reduce the cost and complexity of advanced semiconductor manufacturing while reducing environmental impact by reducing the number of EUV exposure steps required to fabricate high-performance transistors and interconnect layers.

Customers are expanding the use of EUV double patterning to optimize chip area when printing semiconductor devices smaller than the resolution limit of EUV.

Semiconductor manufacturers are addressing the resolution limitations of EUV by using EUV double patterning, which prints a high-density pattern by splitting it in half. Two masks are produced, and the halved patterns are both bonded to an interlayer patterning film, which is then etched onto the wafer.

Although this double patterning is effective in increasing device density, it complicates design and patterning and requires multiple process steps that consume time, energy, materials, and water, which increases the cost of wafer fabs and wafer production.

Applied Materials eliminates additional cost, complexity, and energyWe have worked closely with several key customers to develop the 'Centrua Sculpta' patterning system to enable semiconductor manufacturers to scale their designs without sacrificing material consumption.

Semiconductor manufacturers can print a single EUV pattern and then use the Sculpta system to elongate the pattern shape in the desired direction, reducing the gap between elements and increasing pattern density. Because the final pattern is generated from a single mask, design cost and complexity are reduced, and the risk of yield degradation due to double patterning alignment errors is eliminated.

EUV double patterning requires several additional manufacturing process steps, including CVD (chemical vapor deposition) patterning film deposition, CMP (chemical mechanical polishing) cleaning, photoresist deposition and removal, EUV exposure, electron beam metrology, patterning film etching, and wafer cleaning.

The Sculpta system replaces each sequence in EUV double patterning and provides semiconductor manufacturers with: Capital cost savings of more than $250 million per 100,000 WSPM (Wafer Starts Per Month) of production capacity; Production cost savings of more than $50 per wafer; Energy savings of more than 15 kWh per wafer; Direct greenhouse gas emissions reductions of more than 0.35 kg carbon dioxide per wafer; Water savings of more than 15 liters per wafer.

“The new Sculpta system is a great example of how advances in materials engineering, complementing EUV lithography, can help semiconductor manufacturers optimize chip area and cost while addressing escalating economic and environmental challenges in advanced semiconductor manufacturing,” said Prabu Raja, senior vice president and general manager of the Semiconductor Business Unit at Applied Materials. “The Sculpta system’s unique patterning deposition technology combines Applied’s ribbon-beam and materials etch capabilities to create a groundbreaking innovation in the patterning engineer’s toolkit.”