AI Server Specially Developed for AC/DC Stage
AI Server Power Supply Design and Space Requirements

Infineon Technologies (hereafter Infineon) has launched a product that can meet the energy demands of advanced GPUs that can consume more than 2kW per chip and demanding applications.

Infineon today announced the expansion of its SiC MOSFET development to voltages below 650 V, launching a new CoolSiC™ MOSFET 400 V family based on its latest 2nd generation (G2) CoolSiC technology.

As the power demands of AI processors increase, server power supply units (PSUs) must provide increasingly more power without exceeding the specified dimensions of the server rack.

This is due to the rapidly increasing energy demand of advanced GPUs, which could consume more than 2kW per chip by the late 2020s.

Additionally, increasingly demanding applications are emerging and customer demands are increasing.

This new MOSFET portfolio has been specifically developed for the AC/DC stage of AI servers and complements Infineon’s recently announced PSU roadmap.

These devices are also ideal for solar and energy storage systems (ESS), inverter motor control, industrial and auxiliary power supplies, and solid-state circuit breakers in residential buildings.all.

“Infineon offers a broad portfolio of high-performance MOSFETs and GaN transistors that meet the demanding design and space requirements of AI server power supplies,” said Richard Kuncic, head of Infineon’s Power Systems business unit.

“Infineon is committed to supporting our customers with leading-edge products such as the CoolSiC MOSFET 400V G2 to achieve highest energy efficiency in advanced AI applications,” he said.

This new family of products features extremely low conduction and switching losses compared to existing 650 V SiC and Si MOSFETs.

When implemented with multi-level PFC, the AC/DC stage of the AI server PSU achieves a power density of over 100 W/in3 and an efficiency of 99.5%.

This represents a 0.3 percentage point efficiency improvement over solutions using 650 V SiC MOSFETs.

Additionally, we have completed the system solution for AI server PSU by implementing CoolGaN™ transistors in the DC/DC stage.

Combining high-performance MOSFETs with CoolGaN™ transistors like this can deliver more than 8 kW with more than three times the power density compared to current solutions.

The new MOSFET portfolio consists of ten devices in total, available in five RDS(on) ratings ranging from 11 mΩ to 45 mΩ in the Kelvin source TOLL package and the D2PAK-7 package with .XT package interconnect technology.

Its drain-source breakdown voltage of 400 V at Tj = 25°C makes it ideal for use in two-level and three-level converters and synchronous rectification.

also These devices are highly robust under harsh switching conditions and are 100% avalanche tested. The combination of ultra-rugged CoolSiC technology and .XT interconnect technology allows them to handle power peaks and transients that occur when AI processors suddenly change power demands.

This wiring technology and its low positive RDS(on) temperature coefficient enable excellent performance when operating at high junction temperatures.