로옴 주식회사(ROHM)와 마쯔다 주식회사(Mazda)가 질화 갈륨(GaN)을 이용한 자동차 부품 개발을 통해 에너지 효율성과 혁신성을 겸비한 미래 자동차를 준비한다.
Development of a demo by 2025, commercialization by 2027
ROHM and Mazda are preparing for future automobiles that combine energy efficiency and innovation by developing automotive components using gallium nitride (GaN).
ROHM announced on the 27th that it has begun joint development of automotive parts using gallium nitride (GaN) power semiconductors, which are attracting attention as next-generation semiconductors, with Mazda.
Following the joint development of inverters equipped with silicon carbide (SiC) power semiconductors starting in 2022, the two companies will now collaborate to create innovative components for next-generation electric vehicles with GaN power semiconductors.
GaN contributes to minimizing power conversion loss and reducing component size through high-frequency operation compared to existing silicon (Si) power semiconductors.
This also makes it suitable for vehicle weight reduction and design innovation.
By leveraging these strengths of GaN, ROHM and Mazda aim to develop a demo device by 2025 and commercialize it by 2027.
“Our collaboration with ROHM in the carbon-neutral era is an important milestone toward a sustainable mobility society,” said Ichiro Hirose, CTO of Mazda, expressing his intention to create a new value system by connecting semiconductor technology and automobiles.
Azuma Katsumi (CTO) of ROHM also said, “The collaboration with Mazda will help us realize the inherent charm of automobiles, the ‘fun of driving.’He emphasized the role of EcoGaN™ technology in high-frequency operation and low power consumption, saying, “This is a great opportunity to realize this.”
This joint development mainly targets onboard chargers (OBCs), DC-DC converters, and inverters for vehicles.
In particular, OBC supplies the DC power required to charge electric vehicle batteries, and efficiency and miniaturization are key requirements. Mazda and ROHM plan to provide solutions suitable for the era of electrification and autonomous driving by innovating these vehicle components.
ROHM develops high-efficiency GaN devices and gate drivers to improve the performance of automotive applications and provides EcoGaN™ solutions that simultaneously achieve miniaturization and low power consumption.
Through this collaboration, we aim to optimize automotive GaN devices and develop competitive products that reflect market needs.