STMicroelectronics, a global semiconductor leader, has launched its latest Gallium Nitride (GaN) half-bridge driver, optimizing power conversion and motion control in consumer and industrial applications.

ST announced on the 19th that it has launched the STDRIVEG610 and STDRIVEG611 high-voltage GaN half-bridge gate drivers.

The newly released STDRIVEG610 and STDRIVEG611 are designed to meet diverse needs in the power conversion and motion control sectors, and are expected to contribute to improving performance and reliability in consumer and industrial applications.

The STDRIVEG610 supports a fast start-up time of 300ns, making it suitable for LLC or ACF converter topologies. This improves the efficiency of power conversion by precisely controlling the turn-off interval in burst mode.

The STDRIVEG611 is optimized for hard switching in motion control applications and provides high-side UVLO and smart shutdown overcurrent protection functions for more stable operation.

Both products feature built-in interlocking to ensure reliable operation in hard and soft switching topologies, maximizing efficiency in applications such as home appliances, pumps and compressors, and factory automation drives.

ST’s new GaN half-bridge driver protects the 600V GaN power switch with UVLO protection and enhances reliability with high dV/dt tolerance of ±200V/ns. It also features overtemperature protection to ensure safety during long-term use.

The input pins support an extended voltage range from 3.3 V to 20 V and are designed to simplify the controller interface circuit. It also provides a standby mode function to reduce power consumption during inactivity or burst mode.

The STDRIVEG610 and STDRIVEG611 are designed in a 4mm x 5mm QFN package to save board space and increase efficiency through function integration that reduces the bill of materials (BOM).

Both products are currently in production, with pricing starting at $1.56 for quantities of 1,000.

To support development, the EVLSTDRIVEG610Q and EVLSTDRIVEG611 evaluation boards are also available immediately. The evaluation boards contain a 600V high-speed half-bridge gate driver and two of ST’s SGT120R65AL GaN HEMT devices.