ROHM, a leader in the development of power semiconductor technology, is playing a key role in building the next-generation AI data center power supply architecture.


ROHM announced on the 13th that it is providing solutions optimized for NVIDIA's 800V architecture and is accelerating the development of high-efficiency, high-scalability power systems in line with the realization of MW-class AI factories.

At a time when AI innovation is accelerating, ROHM's technology that can maximize power conversion efficiency in data centers and AI servers is expected to bring about innovative changes across the industry.

ROHM has a wide lineup of power devices, including silicon (Si)-based products as well as wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN).

In particular, Si MOSFETs boast excellent performance in terms of price, efficiency, and reliability, and are already widely used in the automotive and industrial power conversion fields.

The flagship product, 'RY7P250BM', is a 100V power MOSFET for 48V power systems, and implements the industry's highest SOA (stable operating area) performance and ultra-low ON resistance of 1.86mΩ in a compact 8080 package, making it ideal for hot-swap circuits in cloud platforms and AI servers. It is considered an ideal choice.

ROHM's SiC devices minimize power loss by reducing switching and conduction losses in high-voltage and high-current environments.

NVIDIA’s 800V HVDC architecture is essential for powering server racks exceeding 1MW and for large-scale infrastructure deployments, and innovatively improves the physical constraints, copper usage, and power conversion losses of existing 54V rack power systems by directly converting 13.8kV AC from the transmission grid to 800V DC.

This type of high-efficiency power conversion technology is expected to make a significant contribution to simplifying power supply and improving energy efficiency throughout data centers.

Additionally, ROHM is actively developing GaN technology. The EcoGaN™ series is a family of power stage ICs with integrated 150 V and 650 V GaN HEMTs and gate drivers that deliver ultra-fast switching, low ON resistance, and excellent dielectric breakdown strength from 100 V to 650 V.

ROHM's proprietary Nano Pulse Control™ technology shortens the switching pulse width to a minimum of 2ns, making it the optimal solution for demanding compact, high-efficiency power systems.

In addition, high-power SiC modules such as the top-dissipation type HSDIP20 equipped with the 4th generation SiC chip are optimized for LLC-type AC-DC converters and primary DC-DC converters, and play a key role in building NVIDIA's 800V transmission and distribution system.

Based on these innovative technologies, ROHM plans to work closely with data center operators, power supply manufacturers, and others to lead the construction of next-generation AI factories and innovation in power infrastructure.

ROHM's cutting-edge SiC and GaN-based power devices are expected to effectively solve the challenges required by the NVIDIA 800V architecture, such as 'reducing copper usage' and 'minimizing energy loss,' while contributing to the construction of a stable power supply system.