Infineon Technologies (Korea CEO Seung-Soo Lee) is strengthening its market dominance by starting full-scale production of gallium nitride (GaN) power semiconductors based on 300mm wafers.

Infineon announced on the 3rd that its GaN production based on 300mm wafers is progressing smoothly and that it will provide first samples to customers in the fourth quarter of this year.

Infineon has commercialized 300mm GaN technology for the first time in the industry, which can produce 2.3 times more chips per wafer than conventional 200mm wafers, thereby simultaneously increasing production efficiency and cost competitiveness.

GaN semiconductors with superior power density and switching speed lead to miniaturization and energy savings in various fields such as smartphone fast chargers, industrial motor drives, electric vehicle charging infrastructure, and solar inverters.

Infineon has been building a customer-tailored power solution portfolio with a multi-platform strategy encompassing silicon (Si), silicon carbide (SiC), and gallium nitride (GaN). In particular, the GaN product line is rapidly expanding its market.

Based on the IDM (integrated semiconductor manufacturer) model that consistently designs, develops, and produces in-house, Infineon maximizes quality control and speed to market.

A stable supply chain was secured by expanding internal production capacity.

According to market research firms, sales of GaN for power applications are expected to grow at a compound annual growth rate of 36% through 2030, reaching approximately $2.5 billion.

Infineon's large-scale manufacturing capabilities will be a key driver in seizing these growth opportunities.

Over the past year, Infineon has solidified its technology leadership in the market by launching more than 40 new GaN products.

We have earned high trust from our customers and established ourselves as “the GaN partner we have been looking for.”

An Infineon official said, “We will directly return the production efficiency and cost savings achieved through the transition to 300mm wafers to our customers,” and “We will lead GaN in the power semiconductor market.”