Infineon Technologies (Korea CEO Seungsoo Lee) announced new power semiconductor products optimized for customers' demands for increased power density and efficient thermal design, demonstrating technological innovation in the high-power industrial semiconductor market.

On the 30th, Infineon officially announced the CoolSiC™ MOSFET 1200V G2 product in the top-cooled Q-DPAK package, which provides industry-leading thermal performance and system efficiency.

These latest power semiconductors are designed for demanding industrial applications requiring high reliability and high performance, such as electric vehicle (EV) chargers, solar inverters, UPS, industrial motor drives, and circuit breakers.

CoolSiC 1200V G2 technology reduces switching losses by up to 25% for devices with the same RDS(on) and improves system efficiency by up to 0.1%.

The G2 products, which feature Infineon's proprietary silicon bonding technology, .XT, significantly improve thermal management performance by achieving 15% lower thermal resistance and 11% lower MOSFET temperature compared to the G1 product family.

This has attracted attention as a semiconductor solution that ensures stable operation even under high dynamic load conditions.

The CoolSiC MOSFET 1200V G2 series offers a wide range of RDS(on) values from 4 mΩ to 78 mΩ, catering to the application environment.We have a wide portfolio that can optimize system performance to suit your needs.

It can withstand a junction temperature (Tvj) of up to 200°C even under overload conditions, and effectively suppresses unwanted turn-on caused by parasitic elements, thereby enhancing stability and robustness.

A key advantage of the Q-DPAK package is efficient heat dissipation through the top cooling structure.

By directly transferring heat from the top of the device to the heat sink, it exhibits superior thermal conductivity characteristics compared to the conventional bottom cooling method.

This enables a compact design of the overall system and significantly reduces the parasitic inductance essential for high-speed switching, thereby reducing the risk of voltage overshoot.

The Q-DPAK package, with its small footprint and support for automated soldering processes, simplifies PCB assembly, reduces manufacturing costs, and improves high-volume production efficiency. Both single-switch and dual half-bridge configurations of G2 devices are available in this package.

This product launch is seen as another example of Infineon's leadership in technological innovation in the high-power industrial semiconductor market.

CoolSiC MOSFET 1200V G2 is expected to be positioned as an optimized solution for customers' demands for increased power density and efficient thermal design.