SK Hynix has become the first in the memory industry to introduce 'High NA EUV (High Numerical Aperture Extreme Ultraviolet Lithography),' a key next-generation semiconductor manufacturing equipment, to its mass production line, marking its full-scale leadership in next-generation semiconductor technology.

SK Hynix introduced ASML's next-generation exposure equipment 'EXE:5200B' to its M16 fab in Icheon, Gyeonggi-do, and held a commemorative event on September 3.

This introduction is considered a significant milestone in solidifying SK Hynix's technological leadership in the global semiconductor technology competition.

The introduced equipment is the 'TwinScan EXE:5200B' developed by ASML in the Netherlands, which is the first mass-production model of High NA EUV.

By applying NA 0.55, which is 40% improved compared to NA 0.33 of existing EUV equipment, circuit formation that is 1.7 times more precise and integration that is 2.9 times higher can be realized. there is.

This is the level at which the finest circuit patterns can be implemented among existing semiconductor equipment.

SK Hynix plans to use this equipment to simplify the existing EUV process and accelerate the development of next-generation memory, thereby simultaneously securing product performance and cost competitiveness.

The event was attended by ASML Korea President Kim Byeong-chan, SK Hynix CTO (Director of Future Technology Research Institute) Cha Seon-yong, and Vice President of Manufacturing Technology Lee Byeong-gi, who commemorated the introduction of next-generation DRAM production equipment.

CTO Cha Seon-yong stated, “The introduction of this equipment is a key infrastructure for realizing SK Hynix’s future technology vision,” and added, “We will lead the AI memory market by developing cutting-edge memory required by the AI and next-generation computing markets with the most advanced technology.”

ASML Korea President Kim Byung-chan said, “High NA EUV is a key technology that will open the future of the semiconductor industry,” and added, “We will actively support SK Hynix to advance technological innovation by working closely with them.”

Since first introducing EUV to its 10nm-class 4th generation (1anm) DRAM in 2021, SK Hynix has continuously expanded the application of EUV technology to cutting-edge DRAM manufacturing.

On the other hand, the extreme miniaturization and high integration required in the future semiconductor market required technology that goes beyond the existing EUV, and the introduction of this High NA EUV is the answer.

The company stated that with this equipment introduction, it will strengthen its position in the high-value-added memory market and establish a foundation for quickly responding to the needs of global customers. Furthermore, through collaboration with partners, it plans to further enhance the reliability and stability of the global semiconductor supply chain.