"To revolutionize power in the AI era, it's imperative to reduce overall losses by increasing efficiency at each stage of the power conversion structure."

At the '2025 e4ds Tech Day' event held on the 9th, Infineon Technologies Managing Director Yongjin Kim presented on the topic of 'Infineon's next-generation power semiconductors for energy-efficient power management solutions in AI data centers.'

On this day, Managing Director Kim Yong-jin predicted that with the rapid development of AI technology, the demand for power in data centers is skyrocketing, and in particular, with high-performance servers based on GPUs and TPUs becoming more common, a maximum of 2kW of power will be required per single chipset by 2030.

Accordingly, global data centers are expected to account for more than 7% of total power consumption, and efficient power management is emerging as a key challenge for the industry.

Managing Director Kim Yong-jin said, “In order to maximize the energy efficiency of data centers, there must be a step-by-step power conversion process.“The key is to minimize losses,” he said, dividing the power conversion structure into AC→DC PSU, 48V intermediate bus (IBC), and 12V→1V multiphase, and explaining the need to improve the efficiency of each stage.

Based on the current example efficiencies, it was suggested that to increase the overall system efficiency to over 90%, the PSU and IBC would each require over 98% performance, and the 12V→1V conversion would require around 94% performance.

To this end, wide bandgap devices such as silicon carbide (SiC) and gallium nitride (GaN) were put forward as core materials.

“Infineon is responding to various voltage ranges and applications through power semiconductors based on silicon (Si), silicon carbide (SiC), and gallium nitride (GaN),” said Managing Director Kim Yong-jin. “In particular, SiC is suitable for server PSUs that require high voltage and high efficiency, while GaN has strengths in DC/DC converters that require high frequency and miniaturization.”

SiC is advantageous in totem-pole PFC and hard-switching power conversion, and shows strength in high-voltage (650 V or higher) series.

Managing Director Yongjin Kim proposed a design that simultaneously reduces RDS(on) and switching loss by adding a 400V-class SiC product and applying it to a multi-level topology.

GaN has virtually no reverse recovery loss, which allows for higher switching frequencies and reduced passive component size and system area.

Managing Director Yongjin Kim said that in board-level solutions such as IBC, the use of GaN can reduce PCB area by approximately 30%.

In terms of topology, when introducing a 3-level flying capacitor topology compared to a 2-level interleaved PFC, an efficiency improvement of approximately 0.2 to 0.3%p was confirmed at medium loads, and the overall capacity of the data center was increased. He explained that even small figures can lead to meaningful power savings when taken into account.

Infineon also said that it is securing device reliability and heat dissipation performance by lowering thermal resistance and improving SOA and drain current performance with package technologies such as QDPAK and DDPAK.

In addition, the company presented a strategy to minimize power transmission path resistance and simultaneously increase power density and reliability by providing board/module unit solutions such as drivers, controllers, and integrated power stages (SPS) in addition to semiconductors and placing vertical power modules close to AI GPUs and TPUs.


Additionally, changes in UPS and battery backup systems were also discussed.

As power capacity increases, there are more cases of configuring battery-based BBUs (Battery Backup Units) instead of existing UPSs, and topology improvement is needed to stably supply high output during short power maintenance periods, he explained.

Finally, Executive Director Kim emphasized that Infineon's wide-bandgap devices, packages, and system solutions can also contribute to achieving decarbonization goals, as improving data center power efficiency not only reduces power consumption but also reduces cooling load and CO2 emissions.

Infineon announced its plan to respond to customer needs with a multi-source, multi-package strategy by simultaneously developing a 300mm silicon process, 200mm SiC wafer production, and GaN development.
> Managing Director Kim Yong-jin emphasized, “Infineon goes beyond simply supplying semiconductors to provide integrated solutions with efficiency, reliability, and ease of management,” and “We are striving for continuous technological innovation and ecosystem building to respond to the increasing power demand of AI data centers.”

Meanwhile, you can check out Infineon's key products leading the innovation of power systems in the ' Power and Sensor Selection Guide 2025-2026 ' below.