“The SiC (silicon carbide) power semiconductor market will grow dozens of times by 2034. While domestic research capabilities are substantial, we must simultaneously address the pricing, packaging, and mass production challenges of competitors like China through both technological and policy measures to maintain competitiveness.

Kim Hyung-woo, director of the Next Generation Semiconductor Research Center at the Korea Electrotechnology Research Institute (KERI), presented on the topic of “Domestic and International Technology and Market Trends of SiC-Based Power Semiconductors” at the “2025 e4ds Tech Day” event held on September 9.

According to Center Director Kim Hyeong-woo, silicon carbide (SiC) is positioned as a key material in the high-voltage, high-temperature, and high-reliability power electronics field due to its wide bandgap and excellent thermal conductivity.

In particular, it provides practical benefits such as improved efficiency, miniaturization, and reduced cooling load in power modules over 1,200 V and electric vehicle powertrains and rapid charging infrastructure.

In terms of technology, progress has been made in the commercialization of 4H-SiC-based wafer and epi growth and unipolar devices (Schottky diodes, JBS/MPS, and MOSFETs).

MOSFETs are of planar and trench types, and the trench type shows an efficiency advantage at low voltages (≤1,200 V), but at high voltages (≥1,700 V), the planar structure is still competitive due to limitations in epi thickness and diffusion resistance.

On the other hand, commercialization of bipolar devices (IGBT, BJT, etc.) is delayed due to the difficulty in securing P-type concentration due to the high activation energy of P-type dopant (approximately 200 meV).

Research on integrated circuits (SiC CMOS gate drivers) is also active, with development of ICs for high-temperature operation (200-500°C) and packaging and interconnection technologies being carried out in parallel.

The key constraints on the industrial and supply chain side are wafer supply and cost.

SiC has high temperature sublimation propertiesDue to the long process (>1,800∼2,000℃) and difficult defect management, the supply of high-quality wafers is limited, and the price of 6-8 inch wafers is dozens of times that of silicon, making the market entry barrier high.

The global wafer market is dominated by a small number of leading companies, and the intensifying low-price offensive by Chinese companies is accelerating the restructuring of the value chain.

The market is driven by electric vehicles (xEVs) and charging infrastructure, with xEV powertrains, DC fast charging, solar inverters, industrial motors, railways, and power infrastructure as key demand sources.

In the short term, market growth has slowed due to fluctuations in electric vehicle demand and some safety issues in 2023-2024, but the long-term growth outlook remains robust.

According to forecasts citing market data from Omdia, Yole, and others, the SiC power semiconductor market could grow dozens of times by 2034.

Policy and industry-academia cooperation tasks include stabilizing the wafer supply chain, reducing costs (mass production and process advancement), developing high-temperature packaging and interconnections (including alternative materials such as tungsten), and expanding domestic mass production infrastructure.

Center Director Kim Hyeong-woo emphasized, “While domestic research capabilities (in components, processes, and analysis) are substantial, we must simultaneously address the price offensives of competitors like China and the packaging and mass production issues through both technology and policy to secure competitiveness.”