“GaN (gallium nitride) is not simply a next-generation device; it is a core technology that will change the paradigm of power systems.”

At the '2025 e4ds Tech Day' event held on September 9, Texas Instruments (TI) Vice President Seungmok Kim presented on the topic of 'Implementing high-power density and efficient digital power systems with TI GaN FETs', emphasizing that power semiconductors are the core of next-generation industries such as electric vehicles, renewable energy, and high-efficiency power supplies.

Deputy Director Kim Seung-mok first pointed out the evolution of power semiconductors.

Deputy Director Kim Seung-mok stated, "Until 20 years ago, IGBTs were mainstream, but with the advent of SiC, they began to be used in high-voltage systems exceeding 1,200 V. However, switching frequency was limited. On the other hand, GaN can switch up to 12 MHz at voltages of 600 to 650 V, which can dramatically increase power density,” he said.

In fact, GaN is rapidly spreading in various fields such as chargers, solar inverters, and server power supplies.

It is particularly useful in the onboard charger (OBC) and DC-DC converter areas of electric vehicles.

Vice President Kim explained, “There are still limitations to 300kW traction inverters, but they are sufficiently competitive in 1-2kW inverters and chargers.”

TI is developing GaN technology beyond simply supplying components, but also into integrated module form.

GaN FET, gate driver, temperature sensor, protection circuit, etc. are packaged in a single package to increase design convenience and reliability.

“The integrated package reduces parasitic inductance, minimizing problems that arise during high-frequency switching,” said Vice President Kim. “As a result, smaller size and higher efficiency can be achieved.”

Additionally, TI began mass production of GaN on 150mm wafers in 2018 and recently began full-scale production of 200mm wafers at its Aizu plant in Japan.

With production capacity quadrupled, we have established a foundation to meet rapidly growing market demand.

The presentation also mentioned common mistakes and solutions that occur in GaN design.

A representative example is ‘bias power supply design.’

Vice President Kim said, “Many engineers apply the existing flyback power supply as is, but this can cause noise problems during high-frequency switching.” He added, “By utilizing new topologies such as open-loop LLC, we can secure both stability and efficiency.”“You can do it,” he advised.

Misconceptions about costs were also addressed.

GaN is generally perceived as expensive, but when looking at actual system units, it actually has a cost-saving effect.

"For example, applying GaN in a totem-pole PFC circuit can reduce the inductor size and integrate driver and protection functions, reducing the overall BOM cost. Efficiency is also improved by more than 1%, further reducing thermal management costs," he said.

TI has already demonstrated the potential of GaN by unveiling a 66kW OBC reference board.

The board achieved an efficiency of 96.5% and a power density of 38 kW/L.

Additionally, it demonstrates an efficiency of up to 98% in a DC-DC converter that converts 400V to 12V, establishing itself as a key solution for electric vehicle power systems.

‘Single stage OBC’ was suggested as a future trend.

Previously, there were two stages: PFC and DC-DC, but there are active attempts to integrate them into one to maximize power density.

Vice President Kim Seung-mok said, “Tesla has already surprised the industry by applying it to the Cybertruck,” and “TI is also continuing its research in the direction of developing bidirectional GaN to reduce the number of switching elements and cut costs.”

Concluding his presentation, he stated, "GaN is still in its early stages, and there's a misconception that it's expensive and unstable. However, it's already rapidly establishing itself in various industries. It's fully commercializable in 400V electric vehicles and 48V power systems. Over time, it will become a power semiconductor that must be considered."