Gallium nitride (GaN) is a latecomer to the semiconductor industry, but it is overcoming technological limitations and will play a crucial role in AI data centers and improving electric vehicle efficiency.

Hyung-Seok Lee, a senior researcher at the Electronics and Telecommunications Research Institute (ETRI), presented on the ‘Current Status of GaN Wide Bandgap Power Semiconductor Technology Development and Market Trends’ at the ‘2025 e4ds Tech Day’ event held on September 9, and provided an in-depth introduction to the current status of GaN power semiconductor development and future prospects.

GaN has the advantages of operating stably at higher voltages and temperatures than existing silicon (Si)-based semiconductors, as well as fast switching speeds and miniaturization.

In particular, high-speed switching of 1 MHz or more is possible, which can reduce the size of the energy storage device, and operation at high temperatures can be achieved, reducing the burden on the cooling device.

These characteristics play a crucial role in improving the power efficiency of AI data centers and electric vehicles.

GaN does not exist in nature, so it is grown in the form of a thin film on substrates such as silicon and sapphire.Must be done.

Initially, there were many defects, but technologies were developed to reduce defects and improve quality by utilizing superlattice structures and engineered substrates (QST).

Recently, it has become possible to develop vertical devices using single-crystal GaN substrates, which can realize high-voltage devices exceeding several kilovolts.

The HEMT (High Electron Mobility Transistor) structure is a representative form of GaN device and is suitable for high-speed switching and high-current driving.

Initially, normally-on devices were mainstream, but normally-off devices were actively developed for stability and convenience of circuit design.

Various technologies have been attempted, including fluorine treatment, recess etching, and cascode configuration, and recently, P-GaN gate technology is nearing commercialization.

GaN devices generate a lot of heat because high-density current flows through them.

To solve this problem, heat dissipation technology utilizing silicon carbide (SiC) and diamond substrates was introduced, and a double-sided heat dissipation structure was also developed.

Additionally, technology is evolving to lower production costs by utilizing large-area substrates of 8 inches and 12 inches.

Recently, remote epitaxy technology utilizing 2D materials (graphene, HBN, etc.) has been attracting attention.

This technology has the advantage of maximizing heat dissipation performance by detaching the GaN thin film and attaching it to a highly thermally conductive substrate, and allowing the expensive substrate to be recycled.

Major countries such as the United States, Germany, and China are strengthening their domestic production of power semiconductors, and China in particular is continuing to invest aggressively in wide-bandgap semiconductors.

In Korea, major semiconductor companies are also accelerating the development of materials and components. , and it is expected that GaN-based chip production will begin in earnest soon.

GaN is particularly strong in the medium-voltage range below 600 V, and is widely used in various fields such as onboard chargers and AI server power supplies.

Faster switching speeds and miniaturization potential than silicon contribute to increased efficiency of the overall system.

Researcher Lee Hyeong-seok said, “GaN is a latecomer, but it is rapidly developing while overcoming technological limitations,” and predicted, “It will be able to open new horizons in power semiconductors through next-generation technologies such as remote epitaxy.”