Imec, a global nanoelectronics and digital technology research institute, is moving into the development and manufacturing of advanced power electronic devices by transitioning to 300mm GaN (gallium nitride) wafers.

Imec announced on the 10th that it has officially launched an open innovation program for the development of 300mm GaN-based power electronics devices.

This program supports a variety of power electronics applications from low to high voltage, and is expected to simultaneously realize manufacturing efficiency and cost reduction by expanding the wafer diameter from the existing 200 mm to 300 mm.

As part of Imec's Industry Alliance Program (IIAP), this 300mm GaN track will see the participation of key industry players such as AIXTRON, GlobalFoundries, KLA, Synopsys, and Veeco as the first partners to support the establishment of a complete ecosystem.

The 300mm GaN program focuses on GaN epitaxial growth and high electron mobility transistor (HEMT) process development, and is optimized for the development of advanced power devices such as low-voltage point-of-load (POL) converters for CPUs and GPUs.

In particular, utilizing a 300mm substrate can lower manufacturing costs while expanding production scale, which is positive for the entire industry.It is expected to have a positive impact.

GaN technology is emerging as a key player in next-generation power electronics, enabling miniaturization, weight reduction, and high-efficiency energy conversion compared to existing silicon-based solutions.

Typical applications include onboard chargers (OBCs) for electric vehicles, solar inverters, and power distribution systems for telecommunications and AI data centers, contributing to the decarbonization, electrification, and digitalization trends.

Imec is building a low-voltage p-GaN HEMT technology platform utilizing 300mm silicon (111) substrates based on the expertise accumulated from existing 200mm GaN technology, and is also pursuing development based on QST engineered substrates for high-voltage applications of 650V or higher.

In this process, controlling wafer warpage and securing mechanical strength are emerging as key challenges.

“The transition to 300mm wafers goes beyond simple production scaling; it enables the development of high-performance power devices in advanced equipment with CMOS-compatible GaN technology,” said Stefaan Decoutere, GaN Program Director at Imec. “Extremely scaled p-GaN gate HEMTs suitable for POL converters will contribute to increasing the energy efficiency of CPUs and GPUs.”

Imec plans to have dedicated 300mm cleanroom equipment ready by the end of 2025 and will accelerate the commercialization of GaN technology through close collaboration from design to epitaxy, process integration, and packaging.

“We are excited to welcome more partners to this program, which we launched with Axitron, GlobalFoundries, KLA, Synopsys, and Vico, to further strengthen the GaN ecosystem,” added Director Dekutter.