Infineon Technologies (Korea CEO Seung-soo Lee) is accelerating its conquest of the electric vehicle and SDV markets by launching the industry's first automotive-grade 100V GaN transistor.

Infineon announced on the 16th that it has launched a family of automotive-grade 100V GaN (gallium nitride) transistors that have received AEC-Q101 qualification.

The 'CoolGaN™ 100V G1' product line, which has recently begun mass production, includes high-voltage (HV) transistors and bidirectional switches, and is attracting attention as a core power solution for electric vehicles and software-defined vehicles (SDVs).

GaN-based power devices offer higher energy efficiency in smaller form factors than conventional silicon devices, while also contributing to reduced system costs.

Infineon's 100V CoolGaN transistors are optimized for SDV environments switching from 12V to 48V and improve ride and handling by implementing advanced features such as steer-by-wire and real-time chassis control.

This product family is suitable for a wide range of applications including zone control, main DC-DC converters, high-performance auxiliary systems, and Class D audio amplifiers, offering both space-saving design and high efficiency. In particular, it is attracting attention as a power supply solution that responds to vehicle functions with increasing high power demand, such as ADAS, air conditioning systems, and infotainment.

“By introducing GaN power technology into the growing electric and SDV markets, Infineon further solidifies its position as a leader in automotive semiconductor solutions,” said Johannes Schoiswohl, Head of the GaN business line at Infineon. “This 100 V product family and the expansion of our high-voltage portfolio are important milestones in the development of energy-efficient and reliable power transistors.”