ON Semi, a leader in intelligent power and sensing technology, is launching a full-scale offensive on the AI data center, electric vehicle, and renewable energy markets by achieving high voltage and high efficiency with GaN-on-GaN technology.

Onsemi unveiled vertical gallium nitride (vGaN), a next-generation power semiconductor technology, on the 4th.

Developed to meet the surging demand from power-intensive industries such as AI data centers, electric vehicles, and renewable energy, this new product utilizes a proprietary GaN-on-GaN structure to transmit current vertically even at high voltages, enabling both fast switching and miniaturization.

Onsemi's vGaN can reduce power loss and heat generation by up to 50% compared to conventional horizontal GaN, and reduce the size to about one-third.

This enables enhanced power density, thermal performance, and reliability in high-power applications, and is applicable to various fields such as AI data centers, electric vehicle inverters, high-speed charging infrastructure, solar and wind inverters, energy storage systems (ESS), industrial automation, and aerospace.

In particular, AI data centers provide cost savings per rack by increasing the power density of 800V DC-DC converters and reducing the number of components.

In the electric vehicle sector, driving range is extended with compact, lightweight, and high-efficiency inverters.It can handle and implements faster and more robust high-speed charging solutions in the charging infrastructure.

In addition, it is expected to establish itself as a core solution for next-generation energy systems by improving high-voltage processing and bidirectional power conversion efficiency in renewable energy and ESS.

ON Semi's vGaN was developed and manufactured at its Syracuse, New York fab and is based on more than 130 global patents related to process, device design, and system innovation.

Currently, 700V and 1,200V devices are being sampled for early access customers.

Unlike most currently commercialized GaN devices, which are fabricated on silicon (Si) or sapphire substrates, ON Semi’s vGaN utilizes GaN-on-GaN technology to design current to flow vertically within the chip. This provides higher voltage handling capabilities, faster switching frequencies, superior thermal stability, and robust performance even in extreme environments.

Dinesh Ramanathan, Senior Vice President of Corporate Strategy at ON Semi, emphasized, “Vertical GaN is a game-changing technology for the industry. As electrification and AI reshape industries, efficiency has become the new standard defining progress. vGaN will usher in a future where energy efficiency and power density are key to competitiveness.”