Simultaneously solving the two challenges of increasing driving range and reducing charging time
Infineon Technologies is strengthening its push into the electrification market by supplying its silicon carbide (SiC) power semiconductors to Toyota's new electric vehicle model, the bZ4X.
Infineon announced on the 10th that CoolSiC™ MOSFETs have been adopted in the on-board charger (OBC) and DC/DC converter of the bZ4X.
Silicon carbide power semiconductors are considered a key technology that significantly improves electric vehicle efficiency, featuring lower power loss, higher thermal resistance, and superior high-voltage characteristics compared to conventional silicon.
Through this application, the bZ4X is expected to simultaneously solve the two challenges of increasing driving range and reducing charging time.
Infineon's CoolSiC MOSFETs minimize both conduction and switching losses simultaneously by reducing on-resistance and chip size based on a proprietary trench gate structure.
This increases power conversion efficiency and enables the miniaturization and weight reduction of electric vehicle power systems.
In addition, by optimizing parasitic capacitance and gate threshold voltage to implement unipolar gate driving, the driving circuit design was simplified and system reliability was enhanced.
Peter Schaeffer, Senior Vice President and Head of Automotive Sales at Infineon, said, “Toyota, a global automaker, choosing Infineon’s CoolSiC technology is electrification division."This is an example proving our technological capabilities and quality competitiveness in the field," he emphasized, adding, "Silicon carbide is a key component that elevates the efficiency and performance of electric vehicles to the next level and will play a crucial role in realizing future mobility."
Based on flawless quality and continuous technological innovation, Infineon is expanding its presence in markets with surging demand for power semiconductors, such as electric vehicles, charging infrastructure, and energy management systems. The industry anticipates that the adoption of SiC power semiconductors will further accelerate following the application of bZ4X.