Infineon projected that the GaN (gallium nitride) power semiconductor market could grow to approximately $3 billion by 2030, citing the expansion of new applications such as AI data centers and robotics as the key driving force.

On February 11, Infineon Technologies Korea announced that it had published its annual report, 'GaN Insights 2026,' and disclosed the current status of GaN technology applications and market outlook.

According to the report, the GaN power semiconductor market is projected to grow by 58% from $584 million in 2025 to $920 million in 2026. The report explains that based on the expansion of mass production after 2025, GaN is expanding beyond its existing power conversion-centric application scope to the entire industry.

Infineon presented a high-voltage GaN bidirectional switch (BDS) in terms of technology. The company explained that the switch utilizes a Gate Injection Transistor (GIT)-based common-drain design with a double-gate structure, enabling bidirectional voltage cutoff through a single drift region, which allows for a reduction in die size compared to conventional back-to-back configurations. In addition, it was stated that if CoolGaN BDS operating at up to 1 MHz is applied to a solar microinverter, the output can be increased by 40% at the same size.

It was stated that application fields are expanding to include not only AI data centers, robotics, electric vehicles, and renewable energy, but also digital health and quantum computing. Infineon added that GaN-based power supplies with a new topology can reduce power loss by up to 30%, and GaN-based motor drives for humanoid robots can reduce size by up to 40%.

Johannes Scheuisbol, Head of the GaN Business Unit, stated that GaN has established itself as a commercial technology across various industries and that the company is providing solutions based on a product-to-system approach and manufacturing capabilities. Infineon announced that it is expanding its Si, SiC, and GaN power semiconductor portfolio based on its IDM strategy and 300mm GaN wafer manufacturing capabilities.