| 'Trend' of high-speed memory, close-computing resources
| The shorter the storage-compute gap, the less bottleneck there is↓
| Launch of M-RAM, Re-RAM, and PC-RAM mass production system

The AI era requires innovation in memory technology. The key to innovation is to place a significant portion of high-speed memory closer to computing resources to improve performance and power efficiency.

Increasing adjacency reduces the space between data storage and compute engines, eliminating performance bottlenecks and reducing power consumption. This reduces latency and saves energy required to move large amounts of data between memory and compute.

These three types of memory - MRAM (Magnetic RAM), ReRAM (Resistive RAM), and PCRAM (Phase Change RAM) - are considered representative next-generation memories that will bring innovation to IoT devices and cloud computing services in terms of performance, power consumption, and cost. However, they are still manufactured using new materials that are difficult to mass-produce.

Accordingly, Applied Materials launched a new system suitable for mass production of next-generation memory on the 3rd. The 'Endura Clover PVD Platform' for M-RAM and the 'Endura Impulse PVD Platform' for PC-RAM and Re-RAM enable new materials used in M-RAM, Re-RAM, and PC-RAM to be deposited with atomic-level precision during mass production.

MRAM is a next-generation memory candidate for IoT devices because it is low-power, non-volatile, relatively fast, and durable.

Components based on tunnel magnetic junctions (MTJs) consist of two magnetic layers separated by an insulating layer. Think of it as shrinking the read/write heads of a hard disk to the nano level and mounting billions of them inside a chip.

Thickness and other properties are strictly controlled and measured, and all processes are carried out in an extremely sealed vacuum to prevent sensitive materials from being exposed to surrounding impurities.

PC RAM and Re RAM are high-speed, non-volatile, low-power, high-density memories that can be used as storage-grade memory, bridging the widening price-performance gap between server D RAM and storage. PC RAM is based on phase-change materials. This is similar to DVD disk materials. Re RAM uses new materials that have a function similar to a fuse.

Programming is done by applying a current to the resistive material, and reading is done by detecting different levels of resistance. PC RAM and Re RAM are manufactured using composite materials (composed of three or more materials) and are highly susceptible to impurities.

Applied Materials' recently launched systems for mass production of MRAM, PCRAM, and ReRAM deliver several materials engineering breakthroughs needed to create new types of films and structures that were previously impossible.

To implement M-RAM, Applied Materials developed a multi-cathode PVD chamber that precisely deposits ultra-thin layers of five different materials with extreme uniformity and very little energy, preventing unintended mixing of materials.

The Clover M-RAM PVD platform integrates onboard metrology for pretreatment, cryogenic cooling, and high-temperature heat treatment, all under high vacuum conditions.

The Endura Impulse PVD platform for PCRAM and ReRAM consists of nine vacuum-sealed process chambers with onboard metrology to ensure precise deposition and control of the multiple materials used in these memories.

Onboard metrology is critical to controlling thickness between layers and achieving fast ramp times and excellent production yields. This is essential for MRAM, PCRAM, and ReRAM, but it is especially required for MRAM, where some layers must be 8 to 12 times the atomic diameter, and the film uniformity deviation must be less than the diameter of one atom. Ensuring film uniformity is critical to read performance and durability.

Existing measurement techniques cannot maintain a vacuum during the process of removing and inserting wafers into the deposition system, which causes damage to sensitive materials.

On the other hand, onboard metrology capabilities allow for layer thickness measurement and monitoring with a sensitivity of less than 1 Å (Angstrom) during the MRAM, PCRAM, and ReRAM layer creation process, ensuring atomic-level uniformity without the risk of exposure to the external environment.

As we enter the era of AI computing, interest in next-generation memory is increasing along with the continuous improvement of existing memory. Most of the interest is focused on new materials and 3D structures for improving chip performance, power, and cost.

Applied Materials plans to support innovation in industrial computing solutions through new integrated materials solutions for MRAM, PCRAM, and ReRAM.