전 세계에 최신 전자부품 및 산업 자동화 제품을 공급하는 공인 유통기업인 마우저 일렉트로닉스(Mouser Electronics)는 온세미(onsemi)와 협력하여 전력 시스템 설계를 위한 실리콘 카바이드(Silicon Carbide, SiC) 반도체의 이점을 조명한 새로운 전자책을 발간했다.
E-book release, easy access to Onsemi power products
Mouser Electronics, an authorized global distributor with the newest electronic components and industrial automation products, announced today that it has collaborated with onsemi to release a new eBook highlighting the benefits of silicon carbide (SiC) semiconductors for power system design.
SiC devices are revolutionizing power electronics by enabling more efficient, compact, and sustainable power systems due to their outstanding material properties.
In the eBook, 'Enabling a Sustainable Future with Silicon Carbide Power Electronics', ON Semi covers the benefits of SiC, its applications in electric vehicles and renewable energy, and the importance of choosing the right SiC partner.
As a trusted power solutions provider, ON Semiconductor provides high-quality SiC devices backed by a stable supply chain and comprehensive design support.
This eBook also includes links for easy access to ON Semi's power products, such as the NTBG014N120M3P EliteSiC MOSFET.
NTBG014N120M3P is a 1200V M3P planer optimized for power applications. It is a SiC MOSFET.
The planar technology enables stable operation with negative gate voltage and can turn off gate spikes. The device is well suited for solar inverters, electric vehicle charging stations, energy storage systems, and switch-mode power supplies (SMPS).
The NVBG1000N170M1 Elite SiC MOSFET, available from Mouser, is a 1700 V M1 planar device optimized for high-speed switching applications. The device is AEC-Q101 qualified and PPAP supported, making it ideal for electric vehicle (EV) and hybrid electric vehicle (HEV) applications.
In EVs and HEVs, SiC devices offer the advantage of moving towards smaller, lighter, and more efficient power solutions. Their lower energy consumption allows for the use of fewer expensive batteries.
The NCP51705 gate driver is primarily designed to drive SiC MOSFET transistors. To reduce conduction losses to the lowest possible level, this driver can provide the maximum allowable gate voltage for SiC MOSFET devices. It also provides high peak current at turn-on and turn-off to minimize switching losses.
The NCP51560 isolated dual-channel gate driver is designed to drive power SiC MOSFET power switches with fast switching. With two independent galvanically isolated gate driver channels, the device can be used in any configuration, including two low-side and two high-side switches, or a half-bridge driver with programmable dead-time. The NCP51560 also provides several important protection features, including independent under-voltage lockout (UVLO) for the two gate drivers.
The new eBook from Mouser and Onsemi is available at https://resources.mouser.com/manufacturer-ebooks/onsemi-enabling-a-sustainable-future-with-silicon-carbide-power-electronics-mg/.
A list of all manufacturer eBooks available from Mouser can be found at https://resources.mouser.com/manufacturer-ebooks/, and all Mouser news can be found at https://www.mouser.kr/newsroom/.