Samsung Electronics participated in NVIDIA GTC 2026 and strengthened its position in the global AI ecosystem by showcasing a memory integration strategy encompassing next-generation high-bandwidth memory (HBM) technology and AI infrastructure.

Samsung Electronics unveiled its next-generation HBM4E physical chip for the first time at NVIDIA GTC 2026 in San Jose, USA on the 17th, and emphasized its capabilities as a key memory partner for NVIDIA's next-generation AI platform, 'Vera Rubin'.

Samsung Electronics set up an 'HBM4 Hero Wall' in its exhibition space to highlight its technological competitiveness as an Integrated Device Manufacturer (IDM), encompassing everything from HBM4 to memory logic design, foundry processes, and advanced packaging.

In particular, it presented a next-generation AI memory roadmap by unveiling for the first time the HBM4E chip and core die wafer currently under development based on the 1c DRAM process and Samsung Foundry's 4nm technology.

HBM4E is designed to support transfer speeds of up to 16Gbps per pin and bandwidths of up to 4TB/s.

Samsung Electronics has its own memoThe explanation is that high performance and stability have been secured simultaneously by combining technology, logic design, and packaging capabilities.

In addition, the company also introduced Hybrid Copper Bonding (HCB) technology, which reduces thermal resistance by more than 20% compared to conventional bonding methods and enables stacking of 16 layers or more, highlighting its packaging competitiveness for realizing next-generation HBM.

Samsung Electronics also emphasized that it is the only company capable of supplying integrated memory and storage for the NVIDIA Vera Rubin platform.

At the exhibition booth, the cooperative relationship between the two companies was visually represented by showcasing HBM4 for Rubin GPUs, SOCAMM2 for Vera CPUs, and the PCIe Gen6-based server SSD PM1763 along with the platform.

SOCAMM2 is an LPDDR-based server memory module, and mass production shipments have begun for the first time in the industry.

In addition, Samsung Electronics organized exhibition zones themed around AI data centers, on-device AI, and physical AI to introduce various memory solutions, including GDDR7, LPDDR6, and next-generation server SSDs.

On the second day of the event, Song Yong-ho, Head of Samsung Electronics’ AI Center, will take the stage at the invitation of NVIDIA to present the memory integration strategy supporting next-generation AI systems and the vision for AI infrastructure innovation.

Samsung Electronics stated, “As competition in AI performance intensifies, the roles of memory and storage will become even more critical,” and announced plans to lead the next-generation AI infrastructure market through cooperation with NVIDIA.