Physical AI HBM Smart Factory SDV AIoT Power Semicon 특수 가스 정정·반론보도 모음 e4ds plus

Samsung Electronics Develops Industry's First UFS 5.0 for On-Device AI

Google 우선 소스 기사입력2026.06.23 09:13


Achieves 10.8GB/s read speed based on V9 NAND, 40% improved power efficiency, and supports up to 1TB
Samsung Electronics has more than doubled performance compared to its predecessor through a next-generation UFS 5.0 (Universal Flash Storage) memory solution optimized for on-device AI environments.

Samsung Electronics announced on the 23rd that it has developed the industry's first product incorporating the UFS 5.0 interface, the latest embedded memory standard from the semiconductor standardization organization JEDEC (Joint Electron Device Engineering Council). The company explained that this product features the industry's highest level of data transfer bandwidth.

As generative AI expands from a cloud-centric approach to on-device AI, the volume of data processed within mobile devices is increasing.

Accordingly, the company explains that storage devices are evolving beyond simple storage space to play a role that supports AI computation.

UFS 5.0 supports sequential read speeds of 10.8 GB/s and sequential write speeds of 9.5 GB/s.

Samsung Electronics stated that it is improved by more than double compared to the existing UFS 4.1, enabling faster storage and processing of large amounts of data.

The explanation is that it supports AI services that reduce data processing latency and increase response speed to meet the data processing requirements of AI application environments.

Samsung Electronics △clock gating △tailored to mobile low-power environmentsIt was announced that power efficiency has been improved by more than 40% compared to the previous model by applying new technologies such as multi-voltage.

Clock gating is a technology that blocks operating signals for unused circuits, while multi-voltage is a technology that reduces power consumption and heat generation by applying the optimal voltage for each circuit.

The company stated that this reduced power consumption when transmitting the same amount of data, thereby extending battery life.

In addition, it features a package that is 16.7% smaller than its predecessor, measuring 7.5mm in width, 13mm in length, and 0.9mm in height, increasing design flexibility for mobile, wearable, and XR (eXtended Reality) devices, and plans to offer up to 1TB of capacity.

Choi Jang-seok, Senior Vice President and Head of Product Planning Team at Samsung Electronics’ Memory Business Division, stated, “In the era of on-device AI, storage devices are moving beyond simple data storage space to become a key element that determines the AI experience,” adding, “We will set the standard for next-generation mobile storage by completing the development of the industry’s first UFS 5.0.”

Samsung Electronics will begin mass production of UFS 5.0 starting in the fourth quarter of this year and plans to expand supply to meet the demand for next-generation devices, such as flagship smartphones, XR headsets, and AI wearables.