Researchers at Ulsan National University of Science and Technology (UNIST) have developed a semiconductor device capable of reducing power consumption in 6G and satellite communication environments. With a structure capable of simultaneously performing high-frequency communication and signal computation, the device suggests the possibility of improving communication chip design efficiency.

A research team led by Professor Myung-Su Kim of the Department of Electrical and Electronic Engineering at UNIST announced on the 22nd that they have developed a multifunctional memristor semiconductor device based on an oxidized two-dimensional semiconductor material.

This device is characterized by the integration of an RF switch that controls the high-frequency signal path and a matrix operation function into a single device.

A memristor is a device with non-volatile characteristics that maintains its resistance even when the power is turned off. The research team utilized this characteristic to implement a structure that performs signal control and data computation simultaneously.

The research team explained that this reduces the process of moving signals to other circuits, thereby lowering power consumption and latency.

In addition, the device has a structure that consumes no standby power because it maintains a state once set.

As a result of the study, the switching energy was measured to be about 140 picojoules (pJ) and the operating power to be less than 1 milliwatt (mW).

The device has been verified to have high-frequency signal processing performance up to the 67GHz band, and stability for maintaining state for more than 40,000 seconds and 1,000 repeated operations has also been confirmed.

The research team also stated that 1024-QAM signal demodulation and multiple input/multiple output (MIMO) signal recovery are possible using matrix operation functions.

This technology can be applied to 6G communication, satellite communication, radar, and defense radio control systems.

Professor Kim Myung-soo explained, “It is a structure capable of performing RF switching and signal processing simultaneously.”

The results of this study were published in the academic journal 'Advanced Functional Materials'.