It is predicted that GaN power semiconductors will lead market expansion in the ultra-high efficiency and ultra-small power semiconductor market in the future.

e4ds news held the 'e4ds semiconductor technology conference 2021 spring' through an online webinar on the 28th.

Hyung-Seok Lee, a senior researcher at the Electronics and Telecommunications Research Institute who participated in the conference that day, presented the research and development trends of GaN (gallium nitride) power semiconductors for electric vehicles.

Lee Hyeong-seok, head researcher, stated that in order to improve the energy efficiency of electric vehicles, it is necessary to improve the efficiency and miniaturize power conversion devices by using high-efficiency and fast switching power devices. He added that the conditions for ideal power semiconductors are as follows: △low loss, △small leakage current at high voltage, △fast switching speed and low power loss, and △guaranteed reliability, including temperature.

He mentioned that SiC (silicon carbide) and GaN (gallium nitride) materials, which satisfy these conditions, have recently been commercialized or are being studied extensively, and that these wide band-gap power semiconductors are attracting attention as next-generation power semiconductors due to their low power consumption and high-efficiency operation.

In particular, when replacing Si elements with GaN elements, the resistance loss is reduced to 1/1,000, and the efficiency is maintained at 95% DC-DC, 90% AC-DC, and 99% DA-AC, which is higher than that of Si. Efficiency increased by 2-10%p compared to the original device.

GaN power semiconductors can be used in wireless communications, MEMS, switches for display panels, temperature sensors, wireless communications, electric vehicles, aircraft, LED lighting, bio, DVD storage, and fuel cells.

Next, Senior Researcher Lee Hyeong-seok introduced the GaN power semiconductor technology developed by the Electronics and Telecommunications Research Institute. The GaN power semiconductor developed by the Electronics and Telecommunications Research Institute showed an efficiency of 95.42% at 50 W of power.

Lastly, Senior Researcher Lee Hyeong-seok stated, “Compared to silicon semiconductors, it is still expensive, so it is likely to be applied first to products that require high voltage and fast switching speed, and it has recently been commercialized and used in computer adapters, etc.” He added, “However, it will take several years or even 10 years or more to use it in automobiles, as verification of durability and safety is required.”

He also said, “In the case of the Electronics and Telecommunications Research Institute, the path is open for research and development collaboration related to GaN power semiconductor research.”