Transphorm Inc., a leading global supplier of reliable, high-performance gallium nitride (GaN) power conversion products, is now making full-scale inroads into the multi-billion dollar automotive aftermarket with its power FETs now qualified for automotive grade.


Transphorm announced today that its flagship 4th generation 35 milliohm SuperGaN® device has successfully passed the Automotive Electronics Council (AEC) AEC-Q101 stress test, a qualification standard for automotive discrete semiconductors. With this, Transphorm has achieved the milestone of securing its third automotive product line.

The 4th generation TP65H035G4WSQA device has a temperature rating of 175°C, the same as its 3rd generation predecessor. This is 25°C higher than silicon MOSFETs or other GaN solutions, while some GaN solutions are rated at only 125°C.

“With each generation of its GaN platform, Transphorm has simultaneously increased device performance, power density and manufacturability while reducing device prices to near silicon pricing,” said Richard Eden, senior analyst at OMDIA. “The growing automotive interest in GaN technology and Transphorm’s AEC-Q101 qualified GaN portfolio will serve as an accelerator for widespread GaN adoption.” He added, “The early adoption of GaN transistors in the multi-billion dollar automotive market is expected to exceed $100 million by 2025.”

High-voltage GaN solutions can solve many problems faced by electric vehicles. For example, GaN increases the efficiency of power conversion from the battery to the drive train of an electric vehicle. This means that the driving range can be extended even with the same small battery, thereby reducing the driving range anxiety that is a chronic problem of electric vehicles.

In addition, GaN FETs can operate at high frequencies, which can lead to compact and lightweight systems with high power density. This is a clear advantage for onboard chargers (OBCs), DC-DC converters, and main traction inverters, and is also useful for improving battery driving range and fast charging. These three core systems are necessary for the driving and function of battery electric vehicles (BEVs). This is where GaN has a big role to play.