STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, is helping to optimize and simplify IGBT and silicon carbide (SiC) switching circuits for space savings and easier circuit design in high-voltage power conversion and industrial applications.

STMicroelectronics announced today the launch of two new dual-channel galvanically isolated gate drivers for SiC and IGBT MOSFETs.

The STGAP2HD for IGBTs and STGAP2SICD for SiC MOSFETs leverage ST’s latest galvanic isolation technology to provide 6kV transient voltage in the SO-36W wide-body package.

Additionally, transient immunity of up to ±100 V/ns dv/dt prevents spurious turn-on under electrically noisy operating conditions.

The device can provide powerful gate control signals of up to 4A and provides additional flexibility for gate driving through dual output pins that allow independent adjustment of turn-on and turn-off times.

Active Miller Clamp prevents gate spikes during fast commutation in half-bridge topologies.

Circuit protection features include thermal protection and a watchdog for safe operation.(Watchdog), per-channel Under-Voltage Lockout (UVLO) feature to prevent startup in hazardous low-efficiency modes. STGAP2SICD supports higher UVLO threshold voltage optimized for SiC MOSFET requirements.

Each device provides an iLOCK pin to turn on both channels simultaneously in dual low-side and asymmetric half-bridge applications. It also features interlocking to prevent shoot-through currents in conventional half-bridge circuits. Both drivers are rated for high-voltage rails up to 1,200 V and provide an input-to-output propagation time of 75 ns with high PWM accuracy.

ST’s new dual-channel galvanically isolated gate driver features dedicated shutdown and brake pins, and a standby pin to save power, making it ideal for applications such as power supplies, drives, inverters, welders, and chargers. It also simplifies connection to a host microcontroller or DSP with input pins that are compatible with TTL and CMOS logic up to 3.3 V.

The STGAP2HD and STGAP2SICD are in production now, priced at $1.84 in 1,000-piece quantities. The EVALSTGAP2HDM and EVALSTGAP2SICD demo boards are also available to quickly evaluate the driver’s ability to drive a half-bridge power stage.