NXP Semiconductors' GD316x family is used in ZF's next-generation 800V SiC-based traction inverter solution for electric vehicles, helping to improve performance in terms of safety, efficiency, and driving range.

NXP today announced that it is collaborating with ZF Friedrichshafen AG on next-generation SiC-based traction inverter solutions for electric vehicles (EVs).

The solution is designed to accelerate the adoption of 800 V and SiC power devices by leveraging NXP’s advanced GD316x high-voltage (HV) isolated gate drivers.

Safe, efficient, high-performance traction inverters are implemented in the GD316x family and can be designed to extend electric vehicle driving range, reduce charging interruptions, and reduce costs at the OEM system level.

The collaboration between NXP and ZF is a major leap forward in accelerating the electrification of the automotive industry and creating safer, more sustainable and energy-efficient electric vehicles for the future.

“We look forward to working with NXP to raise the bar in functionality and performance for our 800-volt traction inverter solutions, helping us achieve our goals of reducing emissions and increasing sustainability,” said Dr. Carsten Gotte, Senior Vice President Electric Powertrain Technology at ZF. “The combination of ZF’s expertise in motor control and power electronics with NXP’s GD316x gate driver family enables us to deliver the latest generation of SiC-based traction inverters with higher power, volume density, efficiency and differentiation – delivering significant safety, efficiency, range and performance improvements to our customers,” said Mr.

Traction inverters are a key component of electric vehicle electric powertrains, converting battery DC voltage into a time-varying AC voltage to drive the vehicle’s motors. As traction inverters transition to SiC-based designs, the use of SiC power devices in conjunction with HV isolated gate drivers can take advantage of these benefits. These benefits include higher switching frequencies, lower conduction losses, better thermal characteristics, and higher robustness at high voltages compared to previous generations of silicon-based IGBT and MOSFET power switches.

The GD316x family consists of advanced, functionally safe, isolated, high-voltage gate drivers. They integrate a variety of advanced programmable control, diagnostics, monitoring, and protection features to drive the latest SiC power modules for automotive traction inverter applications. This high level of integration reduces footprint and simplifies system design. Additionally, the outstanding features reduce electromagnetic compatibility (EMC) noise while reducing switching energy losses to improve efficiency. Fast short-circuit protection time (<1 μs) combined with a robust programmable gate drive scheme optimizes the performance of SiC power modules in traction inverters.

“Together with ZF, we are developing the next generation of power electronics for future electric vehicles,” said Robert Li, senior vice president and general manager of Electrification at NXP. “NXP’s gate driver family offers a number of compelling features that protect and leverage the benefits of high-voltage SiC power switches and is an ideal choice for ZF’s new SiC-based traction inverter solution. This collaboration demonstrates our commitment to delivering cutting-edge solutions that enable OEMs to achieve their electric vehicle performance and sustainability goals.”

ZF traction inverters implemented with NXP’s GD316x family are already commercially available.