UNIST (President Yong-Hoon Lee) and Hoosung Co., Ltd. are embarking on joint research to develop low-GWP etching technology, and the development of future technologies such as industry-academia convergence research and semiconductor material advancement is expected.

On the 15th, UNIST held the 'Hoonsung-UNIST Joint Research Platform Opening Ceremony' at the 4th Engineering Building (Building 110).

The purpose of this opening ceremony is to establish an open joint research platform for the development of low-GWP etching technology and low-carbon semiconductor device formation technology between Hoosung Co., Ltd., a leading company in the semiconductor gas field in the Ulsan region, and UNIST.

The opening ceremony was attended by CEO Heo Guk of Hoosung Co., Ltd., Ulsan City Economic Vice Mayor Ahn Hyo-dae, Ulsan Technopark Director Kim Il-hwan, UNIST President Lee Yong-hoon, College of Engineering Dean Kim Seong-yeop, Semiconductor Materials and Components Graduate School Dean Jeong Hong-sik, and Research Support Headquarters Director Shin Tae-joo.

The opening ceremony was held in the following order: introduction of the joint research platform of Hoosung Co., Ltd. and UNIST, congratulatory remarks, and a plaque unveiling ceremony.

President Lee Yong-hoon said, “Through the joint research platform between Hoosung and UNIST, we can now conduct industry-academia research and nurture talent simultaneously,” adding, “We expect this to contribute greatly not only to universities and companies, but also to the city of Ulsan and, furthermore, to the development of semiconductors in our country.”

Through the future joint research platform, Hoosung Co., Ltd. and UNIST will develop low-GWP etching gas and etching technology, and process technology for next-generation semiconductors.We plan to focus on discovering next-generation fundamental research projects through the development of alcohol and materials, industry-academia technology exchanges, and cooperation in fostering key talent.