Adopting a trench MOSFET structure instead of a planar
8mΩ/150A rated 1200V half bridge module


Using silicon carbide (SiC) in electric vehicle drivetrains can improve power efficiency, density, and performance. In particular, as battery capacity increases, SiC elements increase inverter efficiency, thereby increasing driving range.

Infineon Technologies AG announced on the 7th the launch of its EasyPACK module that uses CoolSiC automotive MOSFET technology. The new module is a 1200V half-bridge module with a current rating of 8mΩ/150A.

The new modules, which are suitable for HV/HV DC-DC step-up converters, multiphase inverters and fast switching auxiliary drives such as fuel cell compressors, are based on Infineon's SiC trench MOSFET structure. Compared to planar structures, the trench structure allows for higher cell densities. It also increases reliability by operating at low gate oxide field strengths.

CoolSiC automotive MOSFET technology is designed to minimize conduction losses under partial load conditions. This, combined with the low switching losses of SiC MOSFETs, can reduce losses during inverter operation by up to 60% compared to silicon IGBTs.

The EasyPACK CoolSiC automotive MOSFET module FF08MR12W1MA1_B11A, meeting the AQG 324 standard, has started volume production and will be available for purchase from distributors starting in September 2020.