Foundry process refined with EUV, 3D with GAA
Samsung Electronics and TSMC to compete in 3D process in 2022
8-inch foundry, supply shortage continues this year


Currently, the foundry competition is centered around Extreme Ultra Violet (EUV) technology. Since only TSMC, the number one foundry company, and Samsung Electronics, the number two company, have adopted the EUV process, demand is concentrated on the two companies.

The Korea Semiconductor Industry Association (KSIA) predicted in its latest report (January 11, 2021) that the introduction of 3D structures will begin in earnest after the 3nm process.

In the case of Samsung Electronics, it is planned to introduce 'MBCFET (Multi Bridge Channel FET)' based on 'GAA (Gate All Around)' technology, a three-dimensional structure at 3nm. TSMC also plans to adopt the GAA method like Samsung Electronics starting from the 2nm process.

GAA technology, which is a 3D structure, is based on EUV technology, and the barriers to entry into foundry technology will become higher. Accordingly, the TSMC-Samsung Electronics duopoly in the foundry industry is expected to become more solid.

◇ GAA technology, nanosheet technology competition expected to develop

Samsung Electronics is introducing MBCFET technology, which uses a nanosheet method instead of a nanowire method, starting with the 3nm process. Since the company already possesses the secrets of vertical stacking technology through its experience in the 3D NAND field, it is expected to have an advantage over other companies in introducing the technology.

TSMC is expected to continue using existing EUV-based FinFET technology to stabilize technology up to 3nm. However, it is known that it is considering introducing nanosheet-type 3D transistors in the 2nm process at a time similar to the introduction of Samsung Electronics' 3nm process.

The introduction of nanosheet-based 3D transistors is expected to take place around 2022 for both companies, and fierce technological competition is expected to continue even after EUV.

◇ Increased use of deposition/etching/CMP processes to form 3D structures

The MBCFET process using the 3D nanosheet method requires sequential stacking. The difference from 3D NAND is that silicon (Si) and silicon-germanium (SiGe) are sequentially stacked in an epitaxial manner. SiGe is a sacrificial film, and after stacking, it is removed using an etchant to form the necessary gate.

The EUV process usage is expected to increase rapidly up to 5nm, but usage is expected to slow down after the 4nm process. On the other hand, the use of deposition, etching, and CMP processes to form three-dimensional structures is expected to increase.

◇ 8-inch foundry, supply shortage continues to worsen due to increased demand

12-inch foundries and integrated device manufacturers (IDMs) mainly produce logic and memory products that handle calculations and memory on 12-inch chips. 8-inch foundries mainly produce analog chips and sensor chips, such as PMIC, DDI, CIS, fingerprint recognition sensors, and RF chips.

Recently, due to the ongoing shortage of 8-inch foundries, Taiwan's UMC and VIS are raising 8-inch foundry prices by more than 10%. The reason for the shortage of 8-inch foundries is that while demand for 8-inch foundries continues to increase, semiconductor equipment manufacturers such as Applied Materials and Lam Research are mainly focusing on 12-inch equipment for production.

The lukewarm response of equipment suppliers to the supply of 8-inch equipment is hindering foundries from increasing their 8-inch capacity. In addition, the supply restrictions of SMIC, a Chinese foundry, will continue due to US sanctions on China, which is expected to worsen the shortage of 8-inch foundries.