ACM, with its 300mm dry process system
Doped-Undoped-Gate Oxide Deposition and
New addition of high temperature oxidation and annealing equipment


In the latest semiconductor processes, requirements for temperature control uniformity and stability in thermal processes are increasing day by day to maintain wafer yield.

ACM Research announced on the 6th that it has added undoped poly deposition, doped poly deposition, gate oxide deposition, high-temperature oxidation (HTO), and high-temperature annealing process equipment to its 300mm 'Ultra™ Furnace' dry process system.

ACM already supplies furnace systems that can be configured and adjusted to meet customer needs and support silicon nitride (SiN) processes, low-pressure chemical vapor deposition (LPCVD) and alloy annealing processes. We have already started supplying furnace equipment to customers to support new processes here, and we plan to deliver additional equipment in the first half of this year.

The newly added equipment is equipped with its own algorithm that supports stable temperature control performance, and can be easily installed by simply changing some modules and arrangements of the existing ACM oxide silicon nitride system. This reduces the cost burden on customers and allows them to adjust the configuration to meet various requirements.

The first ACM SiN LPCVD tool was released in early 2020 and is being used in logic semiconductor processes. In late 2020, the tool for mTorr-level high vacuum alloy annealing was released and is being used in power semiconductor processes. The new tools have also already started testing with customers and will soon be put into mass production.