Infineon Technologies (Korea CEO Seung-Soo Lee) has launched a 2kV CoolSiC MOSFET for high-voltage solutions, supporting next-generation solar, electric vehicle charging, and energy storage systems.

Infineon announced on the 19th that it recently launched a 2kV CoolSiC device, a high-voltage solution for 1500VDC applications.

As the demand for high power density grows, developers are introducing 1500VDC links into their applications to increase inverter power and reduce system cost.

1500VDC based systems require multi-level topologies to switch quickly at high DC voltages, which complicates the design and requires more components.

To address these new challenges, Infineon has added high-voltage solutions to its CoolSiC™ portfolio to support next-generation solar, EV charging, and energy storage systems.

The expanded CoolSiC portfolio offers 2kV silicon carbide (SiC) MOSFETs and 2kV SiC diodes for applications up to 1500VDC.

birdThe new SiC MOSFETs combine low switching losses and high blocking voltage in a single device, optimally meeting the demands of 1500VDC systems.

The new 2kV CoolSiC technology features low drain-source on-resistance [RDS(on)].

Additionally, the robust body diode is suitable for hard switching. This technology ensures sufficient overvoltage margin, resulting in a 10x improvement in FIT due to cosmic rays compared to 1700 V SiC MOSFETs. The extended gate voltage operating range enhances the device's usability.

The new SiC MOSFET chips are based on Infineon's advanced SiC MOSFET technology, M1H.

The M1H allows for a much wider gate voltage range, improving on-resistance for a given chip size.

A wider gate voltage range increases robustness against driver and layout-related voltage peaks on the gate and allows smooth operation even at high switching frequencies.

Infineon offers EiceDRIVER™ gate drivers with functional isolation up to 2.3 kV to support 2 kV SiC MOSFETs.