EV Group, a leader in wafer bonding and lithography equipment for the MEMS, nanotechnology and semiconductor markets, has enabled thin-film 3D stacking for advanced packaging and transistor miniaturization using EVG’s new layer separation technology using infrared (IR) lasers.

EVG announced today the launch of NanoCleave™, a revolutionary layer release technology for semiconductor manufacturing.

NanoCleave technology enables ultra-thin layer stacking for advanced logic, memory, and power semiconductor front-end processes as well as advanced semiconductor packaging.

NanoCleave is a layer release technology that is fully compatible with all semiconductor processes and is characterized by the use of an infrared laser that penetrates silicon.

Additionally, when used with specially formulated inorganic thin films, it allows for the separation of ultra-thin films or layers from a silicon carrier by infrared laser with nanometer precision.

NanoCleave enables the use of silicon wafer carriers in advanced packaging processes ranging from fan-out wafer-level packaging (FoWLP) using epoxy mold compounds (EMC) and reconstituted wafers to interposers for 3D Stacking ICs (3D SIC).

In addition, it can be applied to high-temperature processes, enabling completely new process flows in 3D IC and 3D sequential integration applications.>
This enables hybrid and fusion bonding even for ultra-thin layers on silicon carriers, which will not only revolutionize 3D and heterogeneous integration, but also enable layer transfer required for next-generation transistor integration designs.

EVG will be presenting its new NanoCleave technology at SEMICON Korea 2024, taking place January 31st through February 2nd at COEX. Visitors to the EVG booth (Booth No. D832, 3rd floor) will be able to meet EVG executives in person to discuss this innovative infrared laser transfer technology.