▲Shin Joo-yong, Director of Texas Instruments Korea

100V GaN power system with thermally enhanced package technology, size 40% ↓, switching loss 50% ↓
1.5W Isolated DC/DC Module Provides 8x Higher Power Density for Automotive and Industrial Applications

Texas Instruments (TI) has set up a forum to share its portfolio of products that have unique strengths in power density to respond to rapidly increasing memory bandwidth and speed trends.

TI held a media briefing on the 5th to introduce two new portfolios of power conversion devices that help engineers achieve more power in smaller devices and deliver ultimate power density at lower cost.

Director Shin Ju-yong, who took the stage as the presenter, introduced the industry's smallest 100V integrated GaN power system suitable for industrial power applications that require increasingly smaller and more efficient power supplies.

TI's 100-V integrated GaN power devices can achieve the highest power density of more than 1.5 kW/in3 with higher integration, increased switching frequency and smaller magnetic components.

TI's GaN power modules, LMG2100R044 and LMG3100R017, enable more than 40 percent reduction in power supply solution size for medium-voltage applications, simplify thermal design with thermally enhanced double-sided cooling package technology, and provide similar It provides more efficient heat dissipation and better thermal resistance performance compared to third-party GaN devices.

Additionally, the new portfolio achieves system efficiencies of more than 98% through lower output capacitance and lower gate drive losses, while reducing switching power losses by 50% compared to silicon-based solutions.

Shin said TI's GaN FETs will be a suitable solution for the challenges industrial power applications face in creating smaller, more efficient power supplies.

It has the advantage of reducing the size of the printed circuit board (PCB) by more than 40% and the number of BOMs, and is optimized for common topologies such as buck converters, boost converters, and BLDC motor drives.

For example, in a solar inverter system, higher density and efficiency can allow the size of the overall microinverter system to be reduced while storing and producing more power with the same number of panels.

The new CEO said that products made with GaN devices were not readily available in the market and were expensive, but they are now common and are expected to be cheaper than SiC by 2022.

▲ Ahn Byeong-nam, Managing Director, Texas Instruments Korea

Next, TI Vice President Byungnam Ahn introduced TI’s new 1.5-W isolated DC/DC modules with integrated transformers, the UCC33420-Q1 and UCC33420, which are suitable for automotive and industrial systems. />
It is the first automotive-certified solution available in a compact package and features next-generation integrated transformer technology that eliminates the need for heavy transformers in vibration-prone isolated bias power supplies.

It is the industry's smallest and highest power density device, enabling engineers to reduce the size of isolated bias power supplies in automotive and industrial systems by more than 89%, and specifically reduce height by up to 75% while cutting the bill of materials in half compared to discrete solutions.

Delivering more than eight times the power density of discrete solutions and three times higher than competitive modules, TI’s new 1.5-W isolated DC/DC module delivers the highest output power and isolation (3 kV) for automotive and industrial systems in a 4-mm × 5-mm VSON (very thin small outline no-lead) package.

Engineers can easily meet stringent electromagnetic interference (EMI) requirements such as Comité International Spécial des Perturbations Radioélectriques (CISPR) 32 and 25 with fewer components and simpler filter designs using TI's UCC33420-Q1 and UCC33420.

For industrial power supplies in space-constrained data centers, designers can use this new module to minimize printed circuit board area.

It also exhibits considerably high noise resistance, capable of withstanding ultra-high voltage transients with a CMTI of over 200 V/ns and primary and secondary capacitances of less than 3 pF.