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Emergency commercialization of 10 automotive semiconductors
The government and private sector are embarking on emergency commercialization of automotive semiconductor components and modules, identifying approxi..
2021.04.08 by 배종인 기자
Infineon announces power diode product line for automotive welding
Infineon Technologies has launched a new generation of power diodes suitable for medium frequency resistance welding and high-current rectifier applic..
2021.04.06 by 이수민 기자
Foundry price hikes domino effect spreads across the IT industry.
Foundries such as TSMC are intensifying price increases, which is driving up unit costs for image sensors, power semiconductors, and other components...
2021.04.06 by 배종인 기자
The US, China, and Japan are accelerating their efforts to become self-sufficient in semiconductor manufacturing, catching up with South Korea and Taiwan.
In the post-COVID era, semiconductor demand has surged dramatically, increasing the importance of foundries. Amid supply instability in semiconductors..
2021.04.05 by 이수민 기자
ST Launches SiC MOSFET Safety Control Driver
STMicroelectronics (hereinafter ST) has added the STGAP2SiCS isolated gate driver, which provides 6kV galvanic isolation to ensure safety in consumer ..
2021.04.02 by 배종인 기자
Government to spur next-generation power semiconductor development
The government is accelerating full-scale development of three next-generation semiconductor materials—silicon carbide (SiC), gallium nitride (GaN), a..
2021.04.01 by 배종인 기자
Maxim, Integrated Power Module Power Design Convenience 'Best'
Using Maxim Integrated's DC-DC power modules reduces design time and design complexity, improving design convenience and reducing costs.
2021.04.01 by 배종인 기자
ST Unveils Two Types of Galvanically Isolated Secondary Sigma-Delta Modulators
ST Microelectronics has launched the ISOSD61 and ISOSD61L sigma-delta modulators with secondary-side galvanic isolation. The ISOSD61 features TTL/CMOS..
2021.04.01 by 강정규 기자
[Power Special Feature I] EMI Avoidance Driving Circuit Techniques for Building High-Power GaN Switching Devices!
When GaN switching devices are connected in parallel, if the gates of the switches are not symmetrical, not only does current sharing between devices ..
2021.03.31 by 명세환 기자

