SK Hynix Develops Third-Generation 10nm DDR4 DRAM, Produced Without EUV Process
SK Hynix announced the development of 16Gbit DDR4 DRAM using third-generation 10-nanometer-class (1z) advanced process technology. The third-generatio…
2019.10.22 by 이수민 기자
Samsung Electronics Creates 24GB HBM with 12-Layer 3D-TSV Technology
Samsung Electronics has developed 12-layer 3D through-silicon via (3D-TSV) technology. 12-layer 3D-TSV is a packaging technology that instead of conne…
2019.10.07 by 이수민 기자
Western Digital Launches Two Industry-Highest Speed 1TB UHS-I MicroSD Cards in Korea
Western Digital is launching microSDXC cards based on its patented flash technology, offering fast speeds of up to 160MB/s and 170MB/s respectively, e…
2019.10.01 by 명세환 기자
"Overcoming Memory Hierarchy Limitations with Optane Technology": Intel Hosts First Memory Technology Event in Korea
Humanity and machines are explosively generating data even at this very moment. However, data only holds value when analyzed in real time. Yet the mem…
2019.09.27 by 이수민 기자
Investment in fab construction reaches $50 billion in 2020
According to SEMI's latest global fab outlook report, investment in newly constructed fabs starting in 2020 is projected to reach $50 billion, an incr…
2019.09.16 by 이수민 기자
Applied Materials Launches Mass Production Solutions for Three Next-Generation Memory Types: M-RAM, Re-RAM, and PC-RAM
In the AI and big data era, the memory sector requires innovations at the angstrom unit level, which is more precise than nanometers, and must address…
2019.09.09 by 이수민 기자
Baidu Designs In-Memory Database Based on 'Intel Optane DC Persistent Memory'
As data processing demands surge exponentially, internet service providers such as Baidu must realize fast and efficient data access and storage. Inte…
2019.09.09 by 이수민 기자
Xilinx Announces FPGA with 9 Million System Logic Cells
Xilinx has launched the Virtex UltraScale+ VU19P FPGA, which integrates 9 million system logic cells. The VU19P, featuring 35 billion transistors, del…
2019.08.22 by 이수민 기자
Spearhead of DRAM Speed Innovation, HBM2E Launched: "50% Faster than HBM2"
SK Hynix has successfully developed HBM2E DRAM. HBM2E is the next-generation product of HBM DRAM, which offers higher data processing speeds compared …
2019.08.19 by 이수민 기자
Microchip's Membrane Neuromorphic Memory Solution Helps Build Embedded AI Processing Architectures
As AI processing shifts from the cloud to the network edge, battery-powered high-performance embedded devices are facing the need to perform AI functi…
2019.08.19 by 최인영 기자
Samsung Electronics begins mass production of SSDs and DRAM modules for next-generation servers.
Samsung Electronics has begun mass production of the PM1733 high-performance NVMe SSD lineup based on the PCIe 4.0 interface and high-capacity DRAM mo…
2019.08.10 by 이수민 기자
Samsung Electronics Begins Mass Production of 12Gb LPDDR5; Next-Generation 5G Smartphones Capable of Processing 44GB of Data in Just One Second
Samsung Electronics announced that it has become the first in the world to achieve mass production of 12Gb LPDDR5 mobile DRAM implementing the fastest…
2019.07.22 by 이수민 기자
SK Hynix, 128-layer 4D NAND mass production… World’s first commercialization of 1-terabit TLC NAND
SK Hynix has developed the world's first 128-layer 1 terabit TLC 4D NAND flash and has begun mass production. The 128-layer NAND being mass-produced i…
2019.06.26 by 이수민 기자
Potential to dramatically increase the speed and capacity of next-generation memory semiconductor MRAM discovered
Professor Jung Myung-hwa's research team at Sogang University has demonstrated the potential to further advance the speed and storage capacity of magn…
2019.06.10 by 이수민 기자
Intel Optane Memory H10 Solid-State Storage, a Memory and Storage Integration
Intel has announced the "Intel Optane Memory H10 with Solid State Storage," which combines the responsiveness of Intel Optane technology and storage c…
2019.04.13 by 이수민 기자