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[Planning] IoT that changes our lives, implemented by cutting-edge technology (2) - Connectivity
The key difference between electronic devices and IoT is 'connectivity'—electronic devices function as the Internet of Things only when individual dev…
2021.05.20 by 배종인 기자
Infineon Launches GaN IPS Family for Mid-to-Low Power Applications
Infineon has strengthened its WBG power device portfolio by launching a new CoolGaN IPS product family. The first product, the 600V CoolGaN IGI60F1414…
2021.05.18 by 강정규 기자
[Planning] IoT: Transforming Our Lives, Implemented by Cutting-Edge Technology (1) - Sensors
The Internet of Things (IoT) refers to a system in which objects are connected and operate through internet connectivity between things without human …
2021.05.17 by 배종인 기자
Infineon Announces Six-Pack SiC Power Module for EV Traction Inverters
Infineon will supply a new automotive power module adopting CoolSiC MOSFET technology starting in June. The 1200V full-bridge module HybridPACK Drive …
2021.05.12 by 명세환 기자
Infineon to Hold Power Seminar on June 16th
Infineon, a global leader in power semiconductors, will hold the "Infineon Power Seminar 2021" online starting at 10:00 AM on June 16th. Registration …
2021.05.11 by 배종인 기자
Infineon Launches Rotary Refrigerator Compressor Reference Board
Infineon has launched two reference boards for rotary refrigerator compressors. The REF_Fridge_D11T_MOS board provides a convenient power stage based …
2021.05.10 by 이수민 기자
Infineon Announces AEC-Q103 Qualified MEMS Microphones
Infineon has launched the Sensive IM67D130A MEMS microphone, which meets the AEC-Q103-003 automotive quality requirement. With an operating temperatur…
2021.04.27 by 이수민 기자
Infineon Launches 600V MOSFETs Optimized for Static Switching
Infineon's CoolMOS S7 10mΩ is a 600V superjunction MOSFET suitable for applications requiring minimized conduction losses, such as solid-state relays,…
2021.04.20 by 이수민 기자
[Power Special II] PCB layout and EV board study for parallel use of GAN devices!
When using GaN power transistors, it is important to note that gate driving is different. Additionally, while parallel configuration is relatively str…
2021.04.15 by 배종인 기자
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Infineon Launches Driver with Built-in Bootstrap Diode
Infineon Technologies announced the launch of new EiceDRIVER 650V half-bridge and high-side/low-side gate drivers. The new products are suitable for m…
2021.04.13 by 이수민 기자
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Infineon announces power diode product line for automotive welding
Infineon Technologies has launched a new generation of power diodes suitable for medium frequency resistance welding and high-current rectifier applic…
2021.04.06 by 이수민 기자
[Power Special Feature I] EMI Avoidance Driving Circuit Techniques for Building High-Power GaN Switching Devices!
When GaN switching devices are connected in parallel, if the gates of the switches are not symmetrical, not only does current sharing between devices …
2021.03.31 by 명세환 기자
Will the ongoing semiconductor supply and demand instability change the foundry landscape?
The shortage of automotive semiconductors stems from major automotive semiconductor manufacturers' failed demand forecasts, who anticipated reduced au…
2021.03.27 by 이수민 기자
Infineon Offers TPM 2.0 to Strengthen Linux System Security
The TPM, which provides high-level security for remote software updates, disk encryption, and user authentication, is an essential element for embedde…
2021.03.26 by 강정규 기자
Infineon Unveils 2nd Generation StrongIRFET 80/100V MOSFET
Infineon has unveiled StrongIRFET 2, its next-generation 80V and 100V power MOSFET technology. It is optimized for both low and high switching frequen…
2021.03.19 by 강정규 기자