Infineon Unveils CoolGaN IPS Family
'IGI60F1414A1L' 600V Half Bridge IPS
Supports low to mid-power chargers, adapters, SMPS, etc.


Infineon Technologies AG announced today the strengthening of its wide bandgap (WBG) power device portfolio with the launch of a new ‘CoolGaN™ IPS (Integrated Power Stage)’ product family. The first product, the 600 V CoolGaN ‘IGI60F1414A1L’ half-bridge IPS, is suitable for low and medium power applications such as chargers, adapters, and SMPS.

The IGI60F1414A1L is ideal for compact designs. It is offered in a thermally enhanced 8×8 QFN-28 package, enabling high power density systems. It combines two 140 mΩ/600 V CoolGaN e-mode HEMT switches with electrically isolated high and low side gate drivers from the EiceDRIVER™ family.

Isolated gate drivers with two digital PWM inputs provide easy control. Integrated isolation, separate digital and power grounds, and simplified PCB design reduce development time while reducing BOM and TCO. The input/output isolation of the gate driver is based on Infineon’s proprietary on-chip coreless transformer (CT) technology. It ensures high speed and robustness even during extremely fast switching transients with voltage slopes exceeding 150 V/ns.

Additionally, a few passive gate path components can be used to tailor the switching behavior as needed, such as optimizing the switching slew rate to reduce electromagnetic interference (EMI) and setting the steady-state gate current to achieve robust operation with negatively biased gate drive in hard switching applications.

In addition, the system-in-package (SiP) integration and the accurate and stable propagation delay of the gate driver minimize the system dead time. This supports the achievement of improved power density of up to 35W/in3 in charger and adapter solutions. It enables flexible, easy and fast design in applications such as LLC resonant topology and motor drives.