Samsung Electronics has proven its leadership in memory semiconductor technology by successfully mass producing 9th generation V-NAND with the highest number of layers possible with a double stack structure.

Samsung Electronics announced on the 23rd that it has begun mass production of the industry's first '1Tb (terabit) TLC (Triple Level Cell) 9th generation V-NAND'.

TLC (Triple Level Cell) is a structure that can record 3 bits of data in one cell.

Samsung Electronics has increased the bit density of its '1Tb TLC 9th generation V-NAND' by approximately 1.5 times compared to the previous generation by implementing the industry's smallest cell size and smallest mold thickness.

The cell flat area was reduced by using dummy channel hole removal technology, and cell interference avoidance technology and cell life extension technology were applied to control interference phenomena that occur when reducing the cell size, thereby improving product quality and reliability.

Samsung Electronics' '9th generation V-NAND' is the highest-density product that can be implemented with a double stack structure, and has also improved productivity by achieving process innovation that drills the industry's largest number of layers at once through 'Channel Hole Etching' technology.

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'Channel hole etching' is a technology that sequentially stacks mold layers and then creates holes (channel holes) through which electrons move at once. In particular, as the number of stacking stages increases and more holes are drilled at once, production efficiency also increases, so sophistication and advancement are required.

The '9th generation V-NAND' has implemented a data input/output speed of up to 3.2 Gbps, which is 33% faster than the 8th generation V-NAND, by applying the next-generation NAND flash interface, 'Toggle 5.1'. Based on this, Samsung Electronics plans to support the PCIe 5.0 interface and expand the high-performance SSD market, thereby solidifying its NAND flash technology leadership.

In addition, the '9th generation V-NAND' is equipped with low-power design technology, which improves power consumption by approximately 10% compared to the previous generation product. It is expected to be the optimal solution for customers who are focusing on reducing energy costs while strengthening environmental management.

Samsung Electronics Memory Business Division Flash Development Office Vice President Heo Sung-hoe said, “As NAND flash products evolve through generations, customer needs for high-capacity and high-performance products are increasing, so we have increased productivity and product competitiveness through extreme technological innovation,” adding, “With the 9th generation V-NAND, we will lead the ultra-high-speed, ultra-high-capacity SSD market in response to the AI era.”

Samsung Electronics plans to mass-produce 'QLC (Quad Level Cell) 9th generation V-NAND' in the second half of this year following 'TLC 9th generation V-NAND', and plans to accelerate the development of high-capacity, high-performance NAND flash required in the AI era.