“We are experiencing a rapid digital transformation, as the total storage capacity of memory produced by Samsung Electronics over the past 40 years has exceeded 1 trillion gigabytes (GB), half of which was produced in the past three years.”

This is what Lee Jung-bae, President of Samsung Electronics' Memory Business Division, said at 'Samsung Tech Day 2022' held in Silicon Valley, USA.

In a presentation held on the 6th, Samsung Electronics unveiled next-generation memory, including the next-generation 10-nanometer DRAM and '8th and 9th generation V-NAND flash'.

At the memory semiconductor session held on the 6th, Samsung Electronics presented its next-generation product roadmap, including the '5th generation 10nm-class (1b) DRAM' and '8th and 9th generation V-NAND'.

President Lee Jung-bae said, “Samsung Electronics will continue to develop and co-evolve with various new platforms through high-bandwidth, high-capacity, and high-efficiency memory.” He also said that he plans to overcome technological limitations, increase quality satisfaction, contribute to the entire industry through a new business model that grows together with customers, and develop it into a sustainable business.
■Data Intelligence Evolution, '5th Generation 10nm Class DRAM' to be Released Next Year

Samsung Electronics unveiled future DRAM solutions that will advance data intelligence and various DRAM technologies to overcome the limitations of process miniaturization.

Samsung Electronics announced that it will collaborate with global IT companies on DRAM technology innovation to cope with the explosive increase in data usage. Next-generation DRAM technology supports various system architectures such as △HBM-PIM (Processing-in-Memory), △AXDIMM (Acceleration DIMM), and △CXL (Compute Express Link).

In addition, the company plans to solidify its leadership in the premium DRAM market by launching next-generation products such as △high-capacity 32Gb DDR5 DRAM for data centers, △low-power 8.5Gbps LPDDR5X DRAM for mobile devices, and △ultra-high-speed 36Gbps GDDR7 DRAM for graphics.

Samsung Electronics announced that it will mass-produce the '5th generation 10nm-class DRAM' in 2023, while overcoming the limitations of process miniaturization through the application of new process technologies such as the High-K Metal Gate process and next-generation product structures.

■2030 “Development of 1,000-layer V-NAND”

Samsung Electronics also unveiled its next-generation NAND roadmap, including mass producing 9th-generation V-NAND in 2024 and developing 1,000-layer V-NAND by 2030.

Samsung Electronics announced that it will mass produce 1Tb TLC (Triple Level Cell) products based on the 8th generation V-NAND within this year. Samsung Electronics boasted that the 8th generation V-NAND is a 512Gb TLC product that improves the number of bits stored per unit area by 42% compared to the 7th generation, and that it is the “industry’s best” in the same specifications.

In addition, the company announced plans to expand the QLC (Quadruple Level Cell) ecosystem to respond to various customer needs that require large amounts of data, such as data centers and artificial intelligence, and to improve power efficiency to contribute to eco-friendly management.
■Vehicle memory and next-generation storage vision

Movements to secure a market share in the rapidly growing automotive solutions and storage sectors are expected to become more active.

Samsung Electronics, which entered the automotive memory market in 2015, has been supplying memory solutions for autonomous driving (AD), advanced driver assistance systems (ADAS), infotainment (IVI), and telematics. Samsung Electronics stated that it plans to expand its market share with the goal of becoming number one in the automotive memory market by 2025.

In addition, as the need for high-performance memory grows due to the advancement and electrification of vehicles, next-generation memory solutions such as LPDDR5X, GDDR7, and Shared Storage are necessary for the development of mobility.

Samsung Electronics, which has a diverse storage lineup ranging from enterprise to client, mobile, and automotive brands, also unveiled the 'PM9C1a' SSD at the event that day, which uses HMB (Host Memory Buffer) technology that directly connects to the DRAM installed in the PC without the DRAM installed inside the SSD.

Samsung Electronics, which is continuing to develop Computational Storage that enhances the internal operation functions of SSDs, announced that it will “create a sustainable future through high-performance, low-power products optimized for artificial intelligence.”

Meanwhile, Samsung Electronics opened the 'Samsung Memory Research Center (SMRC)' to provide customers with an optimized environment for developing and evaluating next-generation memory solutions, and announced that it will sequentially expand SMRC to other regions, including the U.S., starting in Korea in the fourth quarter of this year, in cooperation with Red Hat and Google Cloud.