Kioxia Corporation is developing DRAM using oxide semiconductors, which is expected to reduce power consumption in various applications such as AI, 5G, and IoT.


Kioxia announced that it has developed 'OCTRAM' (oxide semiconductor channel transistor DRAM).

The technology was first presented at the IEEE International Electron Devices Meeting (IEDM) in San Francisco, California, USA on December 9, 2024.

Octram is a new type of 4F² DRAM comprised of oxide semiconductor transistors that feature both high ON current and ultra-low OFF current.

It is expected that low-power DRAM will be implemented by utilizing the ultra-low leakage characteristics of InGaZnO transistors.

Jointly developed by Nanya Technology and Kioxia, the technology has the potential to reduce power consumption in a variety of applications, including AI and post-5G communication systems, as well as IoT products.

Octram uses cylindrical InGaZnO vertical transistors as cell transistors.Do it.

This enables the use of 4F² DRAM, which offers significant advantages in memory density over existing silicon-based 6F² DRAM.

InGaZnO vertical transistors achieve high on-current of more than 15 μA/cell and ultra-low off-current of less than 1 aA/cell through device and process optimization.

In the octram architecture, InGaZnO vertical transistors are integrated on top of high aspect ratio capacitors. This arrangement allows decoupling the interaction between advanced capacitor processes and InGaZnO performance.

A Kioxia official said, “This innovative technology sets a new standard for memory solutions and demonstrates its potential for application in a variety of industries. We look forward to future technological advancements and market responses.”