As semiconductor miniaturization approaches its limits, the demand for next-generation devices and technological innovations is growing. Amid the turbulent waves of change surrounding the ICT industry, the FD-SOI process has been proposed as an alternative to the exponentially increasing costs and physical limitations of semiconductor processes as they become more miniaturized.

The ICT Industry Outlook Conference, which seeks future ICT industry response measures through domestic and international ICT outlooks, was held on the 3rd at the L Tower in Yangjae-dong, Seoul.

This two-day event, hosted by the Ministry of Science and ICT, is themed “Beyond the Digital Transformation to the Digital Leap Forward Era,” and features sessions on a variety of topics, including semiconductors, mobility, AI, economic outlook, and future cities, which are being held both online and offline.

The first session of the conference was opened by Sorin Cristolobeano, Director of the French National Center for Scientific Research, with a presentation titled ‘Challenges to Semiconductor Hegemony’. He expressed a fairly optimistic outlook on FD-SOI technology.

Director Sorin, who said that semiconductor miniaturization will reach its limit at 3 nanometers or less, pointed out that “this is due to the quantum tunneling phenomenon, and considering performance and cost in semiconductor miniaturization, 10 nanometers is the limit.”

He also said that silicon devices are clearly the mainstream material for semiconductor manufacturing and will remain dominant for the next several decades, as transistors are expected to soon reach their minimum size. However, he emphasized that SOI technology can ultimately be applied to the development of innovative devices.

FD-SOI is price competitive in terms of productivity compared to bulk CMOS. It also reduces parasitic capacitance and leakage current, and can be integrated into ultra-low power, RF connectivity, and millimeter-wave security.
Director Sorin mentioned that FD-SOI technology can be applied to capacitor-less DRAM, photonics, 3D integration, quantum devices, four-gate transistors, and artificial spike neurons. He also added the possibility of application to junctionless MOS transistors, and stacked nanowires and nanosheets.

This FD-SOI technology is being led by STMicroelectronics. In July, ST announced that it would expand its existing 12-inch foundry in Crolles, France, and expand its support for FD-SOI-based technology.

On this day, SK Energy Vice President Lee Jae-ho, Shinhan Bank Vice President Oh Geon-yeong, Chief Architect Yoo Hyeon-jun, and Information & Communications Technology Planning & Evaluation Institute Director Lim Jin-guk participated in the conference and gave presentations outlining their future prospects.

In his opening remarks, Jeon Seong-bae, president of the Information and Communications Technology Planning and Evaluation Institute, said, “Quickly identifying and preemptively preparing for the changes we face is the way to achieve continuous growth and innovation,” adding, “I hope that this will be a time to seek opportunities in the midst of a crisis and prepare for 2023.”

Meanwhile, on the second day of the event, sessions will be held on the following topics: AI semiconductors, geopolitical issues, metaverse/NFT, digital media, quantum, next-generation communications, artificial intelligence, and cybersecurity.